Reversible transformation of defects in hydrogen-implanted silicon

Gorelkinskii, Yu.V.; Nevinnyi, N. N.

doi:10.1016/0167-5087(83)90866-9

Cited by 42 publications

(16 citation statements)

References 16 publications

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Section: Introductionmentioning

confidence: 89%

“…12,13 In addition, two donor levels at Ec-0.16 meV and Ec-0.035 meV are found by Hall effect measurements. 12 The AA1 spectrum is observed in the initial stages of annealing at ϳ260-350°C and it was proposed that it is due to the positive charge state of a hydrogenrelated double donor ͑labeled HDD ϩ ͒. 12,13 The NL10-like defect is detected and increases the intensity after longer annealing, or during annealing at a higher temperature than the AA1 center ͑i.e., in the temperature range of 350-450°C͒.…”

Section: Introductionmentioning

confidence: 89%

“…12 The AA1 spectrum is observed in the initial stages of annealing at ϳ260-350°C and it was proposed that it is due to the positive charge state of a hydrogenrelated double donor ͑labeled HDD ϩ ͒. 12,13 The NL10-like defect is detected and increases the intensity after longer annealing, or during annealing at a higher temperature than the AA1 center ͑i.e., in the temperature range of 350-450°C͒. The intensity of the NL10-like spectrum then correlates with the concentration of hydrogen-related shallow donors ͑HSD͒ that may be as high as ϳ1ϫ10 17 cm Ϫ3 .…”

Section: Introductionmentioning

confidence: 99%

“…The intensity of the NL10-like spectrum then correlates with the concentration of hydrogen-related shallow donors ͑HSD͒ that may be as high as ϳ1ϫ10 17 cm Ϫ3 . 12 The HSD centers are also formed in neutron transmutation doped FZ Si grown in a hydrogen atmosphere and annealed at 450°C. 14,15 Recently, a family of hydrogen-related effective-mass-like donors was detected by photothermal ionization spectroscopy measurements made on neutron irradiated Si that had been annealed in a hydrogen plasma in the range of 300-400°C.…”

Section: Introductionmentioning

confidence: 99%

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Stress-induced alignment and reorientation of hydrogen-associated donors in silicon

Gorelkinskii

Nevinnyi

Абдуллин

1998

Journal of Applied Physics

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Electron paramagnetic resonance ͑EPR͒ studies have been made of the stress-induced alignment and the subsequent recovery of the double donor ͑AA1 EPR center͒ that is formed in float-zone silicon following hydrogen implantation and annealing for ϳ20 min at a temperature above ϳ300°C. The obtained data compare with those of the thermal double donor ͑NL8 EPR center͒. The activation energy for atomic reorientation of the (HDD ϩ ) AA1 defect is (2.3Ϯ0.1) eV. The reorientation rate is greater than that of the (TDD ϩ ) NL8 defect formed in Czochralski Si by a factor of 10 4 . Both centers have C 2v symmetry and piezospectroscopic measurements reveal a large compressional strain along their ͓001͔ ͑three-axis͒ direction. However, in contrast to the NL8, the core of the AA1 defect produces also large compressional strain along its one-axis parallel to ͓110͔ direction. These data demonstrate unambiguously that the two centers have different molecular structures, in spite of their similar EPR spectra and electrical properties. It is suggested that the two centers have similar core structures ͑a ͗001͘-oriented self-interstitials complexes͒, while the outer shell structure incorporates hydrogen or oxygen atoms, respectively.

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Section: Introductionmentioning

confidence: 89%

Section: Introductionmentioning

confidence: 89%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Stress-induced alignment and reorientation of hydrogen-associated donors in silicon

Gorelkinskii

Nevinnyi

Абдуллин

1998

Journal of Applied Physics

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“…It appears in proton-implanted Si : H samples following subsequent anneals at 300 to 500 C when two related levels at E c ± ± 0.06 eV and E c ± ± 0.1 eV are observed [2]. It was shown that the defect is a double donor with a ground spin-singlet state and that its concentration can exceed 10 16 cm ± ±3 and may be reversibly changed by quenching from 70 to 300 C to room temperature in water [3,4]. The quenching does not lead to a displacement or splitting of any IR absorption lines associated with local vibrational Si±H modes related to the H-donor.…”

mentioning

confidence: 95%

Excited States of a Hydrogen-Intrinsic Defect-Related Double Donor in Silicon

Tokmoldin

Mukashev

1998

phys. stat. sol. (b)

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IR absorption due to electronic excitations of a hydrogen-intrinsic defect-related double donor (H-donor) in proton-implanted silicon is studied. It is shown that a broad feature at about 600 cm ± ±1 is due to the ionization of the E s % E c ± ± 0.1 eV and E t % E c ± ± 0.06 eV levels while the 375 cm ± ±1 band is related to the E s 3 E t excitation. It is concluded that the E s and E t levels are connected with ground spin-singlet and excited spin-triplet neutral states of the H-donor. An analysis of Si±H bondstretching and bond-bending local vibrational modes allows us to suggest that the H-donor is an interstitial-type complex with two possible configurations with C 2 /C s -or C 2v -symmetry. Introduction. A hydrogen-intrinsic defect-related shallow donor (H-donor)[1] is a mysterious defect in silicon. It appears in proton-implanted Si : H samples following subsequent anneals at 300 to 500 C when two related levels at E c ± ± 0.06 eV and E c ± ± 0.1 eV are observed [2]. It was shown that the defect is a double donor with a ground spin-singlet state and that its concentration can exceed 10 16 cm ± ±3 and may be reversibly changed by quenching from 70 to 300 C to room temperature in water [3,4]. The quenching does not lead to a displacement or splitting of any IR absorption lines associated with local vibrational Si±H modes related to the H-donor.In [5] we reported free-carrier IR absorption and electronic excitations related to the H-donor and found that its formation and annealing correlate with those for the 2107 and 2122 cm ± ±1 Si±H stretching bands which were tentatively assigned to V 2 H 4 . Two C 2h -and C 2 -isomers of V 2 H 4 in the VH 2 È VH 2 configuration may be converted into each other by means of internal rotation around the h111i axis. The local Si±H modes of the isomers may coincide due to the stronger Si±H interaction in the vicinity of one vacant site in comparison with the interaction of the VH 2 structural units. Electronic properties of V 2 H 4 may be reversibly changed by quenching. This was the reason for identifying the H-donor with V 2 H 4 . However, our recent IR studies [6] of local Si±H vibrational spectra showed that the quenching independence of the local Si±H modes may also take place for interstitialtype complexes. In this paper new data on the H-donor excited states and configurations are presented. Another acceptor-type H-related complex that acts as a compensating center is also considered.

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Silicon, paramagnetic centers: principal values and orientations of g-tensors of triclinic centers

Landolt-Börnstein - Group III Condensed Matter

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Reversible transformation of defects in hydrogen-implanted silicon

Cited by 42 publications

References 16 publications

Stress-induced alignment and reorientation of hydrogen-associated donors in silicon

Stress-induced alignment and reorientation of hydrogen-associated donors in silicon

Excited States of a Hydrogen-Intrinsic Defect-Related Double Donor in Silicon

Silicon, paramagnetic centers: principal values and orientations of g-tensors of triclinic centers

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