Review—A Survey of Simulations on Device Engineering of GaN-Based Light-Emitting Diodes

Usman, Muhammad; Anwar, Abdur‐Rehman; Munsif, Munaza

doi:10.1149/2162-8777/aba1cc

Cited by 9 publications

(5 citation statements)

References 93 publications

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“…However, very few direct measurements of either mechanism are published, none of which establishes a dominating magnitude. Most publications on efficiency droop mechanisms base their quantitative claims on modeling and simulation [ 4 , 7 , 8 ]. Nevertheless, the total energy efficiency is usually of greater importance [ 9 ] and it is the focus of this paper.…”

Section: Introductionmentioning

confidence: 99%

Efficiency Models for GaN-Based Light-Emitting Diodes: Status and Challenges

Piprek¹

2020

Materials

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Light-emitting diodes (LEDs) based on Gallium Nitride (GaN) have been revolutionizing various applications in lighting, displays, biotechnology, and other fields. However, their energy efficiency is still below expectations in many cases. An unprecedented diversity of theoretical models has been developed for efficiency analysis and GaN-LED design optimization, including carrier transport models, quantum well recombination models, and light extraction models. This invited review paper provides an overview of the modeling landscape and pays special attention to the influence of III-nitride material properties. It thereby identifies some key challenges and directions for future improvements.

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Section: Introductionmentioning

confidence: 99%

Efficiency Models for GaN-Based Light-Emitting Diodes: Status and Challenges

Piprek¹

2020

Materials

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“…Basically, the difference in temperature of 1°C at a surface could induce a shift in emission wavelength of ≈1.8 nm in the case of blue LEDs and 2.5 nm in the case of green LEDs. [54,55] To address these problems, a number of solutions have been proposed, e.g., Lu et al reported the uniform emission with ≈2 nm deviation by implementing the proper pocket design for 2, 4, and 6 in. wafer.…”

Section: Epitaxial Growth and Chip Processing Of Ledsmentioning

confidence: 99%

Recent Progress in Micro‐LED‐Based Display Technologies

Sajjad

Johar

Hernández-Gutiérrez

et al. 2022

Laser & Photonics Reviews

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163

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The demand for high-performance displays is continuously increasing because of their wide range of applications in smart devices (smartphones/watches), augmented reality, virtual reality, and naked eye 3D projection. High-resolution, transparent, and flexible displays are the main types of display to be used in future. In the above scenario, the micro-LEDs (light-emitting diodes) display which has outstanding features, such as low power consumption, wider color gamut, longer lifetime, and short response-time, can replace traditional liquid crystal displays and organic LEDs-based display technologies. However, to attain a remarkable position in future display technology, the micro-LEDs need to overcome problems associated with mass transfer and its high cost of manufacturing. Besides micro-LEDs, the other option for future displays includes the usage of color conversion medium (phosphor/ quantum dots) to convert some of the blue light into other colors. In this review, the various mass transfer display technologies and color conversion strategies which are being used for the realization of a full-color display are discussed.

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“…In III-Nitrides semiconductors, the asymmetrical behavior of electrons and holes, such as the difference in their effective mass and mobility, deteriorates the performance of devices [123]. Because of that, the concentration of carriers is not uniformly distributed inside of the QW region.…”

Section: Qw and Qb Roles In Uv Emissionmentioning

confidence: 99%

Physical and technological analysis of the AlGaN-based UVC-LED: an extended discussion focused on cubic phase as an alternative for surface disinfection.

et al. 2022

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Crisis in coronavirus times requires understanding the effects on society and establishing efficient mechanisms to prevent infections. The disinfection of personal protection equipment by UVC light remains a key opportunity area. Therefore, this letter presents the main drawbacks and challenges on the fabrication of deep ultraviolet LEDs based on III-nitrides, such as the substrate selection, dislocation reduction, the increase of external quantum efficiency, enhancement of the radiative recombination in the active region, the complications to reach high Al content in AlGaN-based UVC LED avoiding the reduction of the p-doping, replacing the p-GaN contact layer by p-AlGaN without hindering the deposition of ohmic contacts. Furthermore, the cubic phase is suggested as a promising candidate for AlGaN UVC-LEDs applications as is discussed in this work.

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Review—A Survey of Simulations on Device Engineering of GaN-Based Light-Emitting Diodes

Cited by 9 publications

References 93 publications

Efficiency Models for GaN-Based Light-Emitting Diodes: Status and Challenges

Efficiency Models for GaN-Based Light-Emitting Diodes: Status and Challenges

Recent Progress in Micro‐LED‐Based Display Technologies

Physical and technological analysis of the AlGaN-based UVC-LED: an extended discussion focused on cubic phase as an alternative for surface disinfection.

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