Review and test of methods for determination of the Schottky diode parameters

Abstract

This paper deals with the extraction of the Schottky diode parameters from a current-voltage characteristic. 10 analytical methods, 2 numerical methods, and 4 evolutionary algorithms of the series resistance, barrier height, and ideality factor determination are reviewed. The accuracy of the methods is quantified using a wide range of both ideal and noisy synthetic data. In addition, the influencing factors of the parameters extraction accuracy are estimated. The adaptive procedure, which improves the precision of analytical Gromov's method, is suggested. The use of Lambert W function has been shown to reduce the error of parameter extraction by numerical method. Finally, all methods are applied to experimental data. The most reliable and preferred methods are chosen.

Tunable Schottky barrier and high responsivity in graphene/Si-nanotip optoelectronic device

“…We used I-V data below and around , and followed the Cheung method [30][31] to extract and at a given temperature from the slope and the intercept of the corresponding (ln ) ⁄ vs.…”

On a rapidly converging iterative algorithm for diode parameter extraction from a singleIVcurve

“…It is worth noting that in the literature is reported that to extract the four parameters, by means of only the direct I-V characteristic, is difficult and cumbersome. This is an active area of research, in which periodically the state of the art is summarized in review articles such as [6] for the Schottky diode, [8] for the solar cells and [5] for the diode and solar cells, just to cite a few of them. Moreover, the method of I-V characteristic is also used in different research areas, such as, for example, [26].…”

“…the temperature. Therefore a practical procedure to evaluate the relevant parameters from a single measure of the current crossing the diode as a function of the applied external voltage V is desirable and it is widely discussed by many authors [4][5][6][7]. In general, the extraction of the parameters of a given model from the measured IV curves is a non-trivial task, since the I-V dependence is usually expressed in an implicit form.…”

On Estimating Differential Conductance from Noisy I-V Measurements in Delineating Device Parameters

“…The plot of α versus V allows determining diode parameters. However, Olikh in [4] demonstrates with the synthetic data contaminated with 1% of random noise that the parameter estimation using α versus V plot affects severely due to lack robustness in generating the α − V curve. In the following example we demonstrate how the proposed method provides robust estimate of α − V curve from noisy I-V characteristic.…”

“…[1][2][3]. In that the variation of differential conductance (δ G = dI/dV ) with respect to the bias voltage is used in estimating Schottky diode parameters [4][5][6]. Similarly, with a metal oxide semiconductor (MOS) device the important device parameters, such as channel conductance (g d = dI D /dV D ), transconductance (g m = dI D /dV g ), channel mobility (µ 0 ) and threshold voltage (V th ) are obtained from the measurement of drain current (I D ) versus gate-source voltage (V g ) and the drain current (I D ) versus drain-source voltage (V D ) [7] .…”