Review of advanced hydrogen passivation for high efficient crystalline silicon solar cells

Lee, Sangeun; Bhopal, Muhammad Fahad; Lee, Doo Won; Lee, Soo Hong

doi:10.1016/j.mssp.2018.01.019

Cited by 49 publications

(20 citation statements)

References 92 publications

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“…This information is invaluable for informing the further development of casting methods for crystalline silicon growth in order to avoid the formation of defects than cannot be passivated. 2,25 It can also be observed how specific processing conditions, such as temperature and carrier injection, 13,40 can either increase or decrease the amount of hydrogen present at crystallographic defects. A better understanding of these effects is critical for optimising such processes and continuing to improve the performance of solar cells based on these materials.…”

Section: Discussionmentioning

confidence: 99%

Direct observation of hydrogen at defects in multicrystalline silicon

Tweddle

Hamer

Shen

et al. 2019

Progress in Photovoltaics

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Hydrogen passivation is a key industrial technique used to reduce the recombination activity of defects in multicrystalline silicon (mc-Si). However, not all dislocations and grain boundaries respond well to traditional hydrogen passivation techniques. In order to understand the reasons for these different behaviours, and how superior passivation might be achieved, a method is required for the direct observation of hydrogen at these defects. Here, we present a novel characterisation technique based on a combination of transmission Kikuchi diffraction (TKD), atom probe tomography (APT), and isotopic substitution that enables unambiguous detection and quantification of hydrogen atoms present at crystallographic defects in mc-Si.

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Section: Discussionmentioning

confidence: 99%

Direct observation of hydrogen at defects in multicrystalline silicon

Tweddle

Hamer

Shen

et al. 2019

Progress in Photovoltaics

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“…In Si-technology,p assivation of dangling bonds is often achieved by the formation of Si À H, Si À N, and Si À O, covalent bonds.Inparticular, H-passivation in Si can diffuse into bulk and heal bulk shallow traps. [60] Similarly,s everal strategies of surface passivation have been proposed for thin-film solar cell technologies of CIGS and CdTet hat resulted in enhancements in their performance. [13a, 61] On the basis of such knowledge,s everal passivation chemistry strategies were also proposed in perovskite materials.T he ionic nature of perovskites requires different defect passivation strategies from covalent-bonding semiconductors because the defects in perovskites are charged, either positively (e.g., ahalide ion vacancyl eading to undercoordinated Pb 2+ )o rn egatively (e.g., aM A + cation vacancy and PbI 3 À anti-site defect);h owever, the overall charge neutrality should be conserved.…”

Section: Defect Passivation In Metal Halide Perovskitesmentioning

confidence: 99%

Reducing Detrimental Defects for High‐Performance Metal Halide Perovskite Solar Cells

2020

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In several photovoltaic (PV) technologies, the presence of electronic defects within the semiconductor band gap limit the efficiency, reproducibility, as well as lifetime. Metal halide perovskites (MHPs) have drawn great attention because of their excellent photovoltaic properties that can be achieved even without a very strict film‐growth control processing. Much has been done theoretically in describing the different point defects in MHPs. Herein, we discuss the experimental challenges in thoroughly characterizing the defects in MHPs such as, experimental assignment of the type of defects, defects densities, and the energy positions within the band gap induced by these defects. The second topic of this Review is passivation strategies. Based on a literature survey, the different types of defects that are important to consider and need to be minimized are examined. A complete fundamental understanding of defect nature in MHPs is needed to further improve their optoelectronic functionalities.

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“…This allows hydrogen to bond to dangling bonds and defects increasing the efficiency, as well as clearing out any excess hydrogen that may otherwise cause degradation. 23,[27][28][29] Cells before and after this hydrogenation treatment are investigated in Section 3.1 to demonstrate the importance of this step. LeTID testing of cells is performed at 70 ± 5 C under $1-sun illumination for 160 h. The champion cell efficiency was measured at the Chinese Academy of Sciences.…”

Section: Methodsmentioning

confidence: 99%

“…JinkoSolar's HOT cells have also undergone hydrogenation treatments to control the hydrogen for enhanced passivation, as well as to mitigate LeTID. [27][28][29] The average of 50 cells' V OC , J SC , fill factor (FF), pseudo-fill factor (pFF) and R S before and after the hydrogenation process is shown in Table 1. The average V OC improves from 696 to 703 mV, and the average FF increases from 82.03% to 83.07%, leading to 0.64% abs average efficiency gain from 23.51% to 24.15%.…”

Section: Hydrogenated N-type Cells and Wafersmentioning

confidence: 99%

24.58% efficient commercial n‐type silicon solar cells with hydrogenation

Chen

Wright

Chen

et al. 2021

Progress in Photovoltaics

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Tunnelling oxide passivated contact (TOPCon) solar cells are gaining significant commercial interest, due to the potential for high efficiency. Industrially, this passivated contact scheme is typically coupled with an n-type Czochralski (Cz) wafer. JinkoSolar Holding Co., Ltd. is one of the leading manufacturers that are producing n-type TOPCon solar cells (referred to as 'HOT' cells) on a commercial scale. In this work, the influence of a post-cell hydrogenation step, using illumination from an LED light source, on the performance and stability of n-type TOPCon solar cells is investigated.The incorporation of this additional hydrogenation treatment led to an average efficiency enhancement of 0.64% abs on a batch of 50 cells made in an industrial environment. This significant improvement was caused by a 6.9 mV and 1.04% abs increase in open-circuit voltage (V OC ) and fill factor (FF), respectively. We also assessed the stability and found almost no light-and elevated temperature-induced degradation (LeTID) in hydrogenated n-type TOPCon cells. Testing at 70 ± 5 C under 1-sun illumination revealed that the maximum degradation is limited to 0.06% rel .Following further stability testing, the efficiency increased beyond the initial value, up to 0.4% rel increase after 120 h. By incorporating this hydrogenation process into the production, an average line efficiency of 24.08% and V OC of 707.5 mV was achieved. The champion cell from the batch displayed an efficiency of 24.58%, as certified by measurement at the Chinese Academy of Sciences.

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Review of advanced hydrogen passivation for high efficient crystalline silicon solar cells

Cited by 49 publications

References 92 publications

Direct observation of hydrogen at defects in multicrystalline silicon

Direct observation of hydrogen at defects in multicrystalline silicon

Reducing Detrimental Defects for High‐Performance Metal Halide Perovskite Solar Cells

24.58% efficient commercial n‐type silicon solar cells with hydrogenation

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