Review of BiScO3-PbTiO3 piezoelectric materials for high temperature applications: fundamental, progress, and perspective

Electromechanical Performance Optimization of Ni-Doped Bi(Sc, Zr)O3–PbTiO3 Ceramics and Microstructure Analysis

“…In situ testing feedbacks the d 33 in real time under the temperature stimulus. The increase of in situ d 33 as temperature increasing can be attributed to the enhanced domain wall mobility and shallower free energy wells at elevated temperatures, 12 which is also reflected in the significantly increased ε r (Figure 2). On the whole, the x = 0.025/y = 0.63 sample shows good potential for the employment in high-temperature environments because the d 33 and Q m maintain at a high level, i.e., 367−380 pC/N and 106−112 in the temperature range of 25−250 °C.…”

“…The BiScO 3 –PbTiO 3 (BS-PT) piezoelectric system has attracted more and more attention over the recent decades due to its high T C ∼ 450 °C and large d 33 of >400 pC/N at the rhombohedral/tetragonal morphotropic phase boundary (MPB) . Compared with PZT, BS-PT owns higher Curie temperature and competitive piezoelectric performance, which can be an excellent option for high-temperature piezoelectric devices. − However, the high dielectric loss (tan δ > 3%) and low mechanical quality factor ( Q m < 30) are the major obstacles for the high-power and high-frequency applications of BS-PT-based ceramics.…”

Strained topological insulator spin field effect transistor

“…The energy dissipated in the frequency multiplication operation is C V ampl gate 2 = CM 2 V 2 period where C is the gate capacitance associated with either of the two electrodes in figure 1. The relative dielectric constant κ of the perovskite (piezoelectric) is ∼2000 [14] and hence the capacitance C = κε 0 A/ d = 0.18 fF where we have assumed that the electrode area A is 0.1 µm ×0.1 µm. In the example here, M = 4 and V period = 0.75 V. Therefore, the energy dissipated in the frequency multiplication is ∼1.62 fJ, which makes it remarkably energy efficient.…”

Large piezoelectricity and high depolarization temperature in BiScO3–BiYbO3–PbTiO3 ceramics for energy harvesting at elevated temperatures

“…A high Curie temperature ( T C ) is a necessary condition for high-temperature applications of piezoceramics, with a value that is generally not less than 400 °C. 17 To quantify the T C of the (1 − x − y )BS– x BY– y PT piezoceramics, the variable temperature dielectric constant ( ε r ) and dielectric loss (tan δ ) values for each ceramic sample were tested, as shown in Fig. 2(a) and (b).…”

“…The BiScO 3 -PbTiO 3 (BS-PT) system has been considered to be a very competitive candidate high-temperature piezoelectric material in the perovskite piezoelectric family since its inception in 2001. 16,17 This is mainly because the Curie temperature (T C ) and T d values of the BS-PT system at the morphotropic phase boundary (MPB) are approximately 100 1C higher than the corresponding values for PZT when their d 33 values are similar. 5,18 In terms of modulation of the high-temperature piezoelectric properties of BS-PT piezoceramics, one very effective method is to introduce a perovskite-type third element into the BS-PT matrix to form a ternary solid solution.…”