Review of electrical characterization of ultra-shallow junctions with micro four-point probes

Petersen, Dirch Hjorth; Hansen, Ole; Hansen, Tony; Bøggild, Peter; Lin, Rong; Kjær, Daniel; Nielsen, Peter Brønnum; Clarysse, Trudo; Vandervorst, Wilfried; Rosseel, Erik; Bennett, Nick; Cowern, N.E.B.

doi:10.1116/1.3224898

Cited by 47 publications

(40 citation statements)

References 31 publications

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“…Sheet resistance mapping was performed using a microscopic four-point probe, 28,29 in which the adjacent probe tips are separated by $10 lm. Sheet resistance mapping was performed using a microscopic four-point probe, 28,29 in which the adjacent probe tips are separated by $10 lm.…”

Section: B Ni-ingaas Sheet Resistance Uniformity and Bulk Resistivitymentioning

confidence: 99%

Crystal structure and epitaxial relationship of Ni4InGaAs2 films formed on InGaAs by annealing

Ivana¹,

Foo²,

Zhang³

et al. 2012

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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The structural, compositional, and electrical properties of epitaxial Ni4InGaAs2 (denoted as Ni-InGaAs) film formed by annealing sputtered Ni film on InGaAs were investigated. It was found that Ni-InGaAs adopts a NiAs (B8) structure with lattice parameters of a = 0.396 ± 0.002 nm and c = 0.516 ± 0.002 nm, and exhibits an epitaxial relationship with InGaAs, with orientations given by Ni-InGaAs[1¯10]//InGaAs[001] and Ni-InGaAs[110]//InGaAs[110]. The epitaxial Ni4InGaAs2 film has bulk electrical resistivity of ∼102 μΩ·cm, which increases as the film thickness scales below 10 nm. The results of this work would be useful for the development of contact metallization for high mobility InGaAs metal-oxide-semiconductor field-effect transistors.

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Section: B Ni-ingaas Sheet Resistance Uniformity and Bulk Resistivitymentioning

confidence: 99%

Crystal structure and epitaxial relationship of Ni4InGaAs2 films formed on InGaAs by annealing

Ivana¹,

Foo²,

Zhang³

et al. 2012

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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“…27 Micro Hall effect measurements were used for their ability to accurately measure the electrical properties of ultrashallow junctions. [28][29][30] Micro Hall effect characterization was completed using a CAPRES microRSP M-150 M4PP fitted with Au-coated probes, a probe spacing of 20 lm, and a permanent magnet with a magnetic flux density of 0.475 T. Hall sheet number (n H ) and mobility values (l H ) were adjusted to obtain the carrier sheet number (n s ) and drift mobility (l d ) by using a scattering factor (r H ) of 1.21 as determined empirically. 7 The carrier density and drift mobility are related to the Hall values by n s ¼ n H Â r H and…”

Section: à2mentioning

confidence: 99%

Activation and thermal stability of ultra-shallow B+-implants in Ge

Yates

Darby

Petersen

et al. 2012

Journal of Applied Physics

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The activation and thermal stability of ultra-shallow B+ implants in crystalline (c-Ge) and preamorphized Ge (PA-Ge) following rapid thermal annealing was investigated using micro Hall effect and ion beam analysis techniques. The residual implanted dose of ultra-shallow B+ implants in Ge was characterized using elastic recoil detection and was determined to correlate well with simulations with a dose loss of 23.2%, 21.4%, and 17.6% due to ion backscattering for 2, 4, and 6 keV implants in Ge, respectively. The electrical activation of ultra-shallow B+ implants at 2, 4, and 6 keV to fluences ranging from 5.0 × 1013 to 5.0 × 1015 cm−2 was studied using micro Hall effect measurements after annealing at 400–600 °C for 60 s. For both c-Ge and PA-Ge, a large fraction of the implanted dose is rendered inactive due to the formation of a presumable B-Ge cluster. The B lattice location in samples annealed at 400 °C for 60 s was characterized by channeling analysis with a 650 keV H+ beam by utilizing the 11B(p, α)2α nuclear reaction and confirmed the large fraction of off-lattice B for both c-Ge and PA-Ge. Within the investigated annealing range, no significant change in activation was observed. An increase in the fraction of activated dopant was observed with increasing energy which suggests that the surface proximity and the local point defect environment has a strong impact on B activation in Ge. The results suggest the presence of an inactive B-Ge cluster for ultra-shallow implants in both c-Ge and PA-Ge that remains stable upon annealing for temperatures up to 600 °C.

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“…Using GeSn:B mobility values measured by micro-Hall measurements, 15 reported in Fig. 3(b), and sheet resistances measured by the micro-four-point-probe (M4PP) technique, 16 the active concentration of B in GeSn was calculated and is reported as function of the B 2 H 6 partial pressure, also in Fig. 3(a).…”

mentioning

confidence: 99%

Undoped and in-situ B doped GeSn epitaxial growth on Ge by atmospheric pressure-chemical vapor deposition

Vincent

Gencarelli

Bender

et al. 2011

Applied Physics Letters

196

155

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Review of electrical characterization of ultra-shallow junctions with micro four-point probes

Cited by 47 publications

References 31 publications

Crystal structure and epitaxial relationship of Ni4InGaAs2 films formed on InGaAs by annealing

Crystal structure and epitaxial relationship of Ni4InGaAs2 films formed on InGaAs by annealing

Activation and thermal stability of ultra-shallow B+-implants in Ge

Undoped and in-situ B doped GeSn epitaxial growth on Ge by atmospheric pressure-chemical vapor deposition

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