2017
DOI: 10.1016/j.solmat.2017.07.006
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Review of grain interior, grain boundary, and interface effects of K in CIGS solar cells: Mechanisms for performance enhancement

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Cited by 84 publications
(85 citation statements)
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“…Heavier alkali dopants also happen to be displaced to and from surfaces and grain boundaries, depending on temperature and relative concentration. 8,10,68 This phenomenon is not clear yet, but it has obvious implications on the more recent strategy for efficiency enhancement with heavier alkali metals 24 (cf. Fig.…”
Section: The Hound: Gallium Gradingmentioning
confidence: 99%
See 1 more Smart Citation
“…Heavier alkali dopants also happen to be displaced to and from surfaces and grain boundaries, depending on temperature and relative concentration. 8,10,68 This phenomenon is not clear yet, but it has obvious implications on the more recent strategy for efficiency enhancement with heavier alkali metals 24 (cf. Fig.…”
Section: The Hound: Gallium Gradingmentioning
confidence: 99%
“…1b. (c) The post deposition treatment (PDT) with heavier alkali metal uorides (KF, [8][9][10] RbF and CsF 11 ), Fig. 1c.…”
Section: Introductionmentioning
confidence: 99%
“…Although alkali metal incorporation is beneficial, its primary role is somewhat different . Sodium mainly affects the carrier concentration and improves the open‐circuit voltage ( V OC ) . On the other hand, as compared to the incorporation of Na, the incorporation of K and Rb is less effective in increasing the carrier concentration in CIGSe .…”
Section: Comparison Of the Device Parameters Of Cigse Thin Films Subjmentioning
confidence: 99%
“…On the other hand, as compared to the incorporation of Na, the incorporation of K and Rb is less effective in increasing the carrier concentration in CIGSe . Furthermore, KF and Rb‐PDT modify the surface morphology of CIGSe and increase the V OC by changing the energy band diagrams at the buffer/CIGSe interface and grain boundaries (GBs) on the CIGSe thin‐film surface . In addition, the modified surface promotes large coverage of the buffer layer and results in an increase in the short‐circuit current ( J SC ) by reducing the thickness of the buffer layer .…”
Section: Comparison Of the Device Parameters Of Cigse Thin Films Subjmentioning
confidence: 99%
See 1 more Smart Citation