Review of Integrated Magnetics for Power Supply on Chip (PwrSoC)

Mathúna, Cian Ó; Wang, Ningning; Kulkarni, Santosh; Roy, Saibal

doi:10.1109/tpel.2012.2198891

Cited by 285 publications

(121 citation statements)

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“…From the more simple ones using a planar spiral [46]- [49], to toroids [50], [51], and also using magnetic films to reduce the required size of the inductors [8], [19]. The main concern is the achievable Q values -the relation between its inductive value, frequency and resistive value.…”

Section: E Inductorsmentioning

confidence: 99%

“…This limits the self-resonance significantly [52]. The toroidal designs presented in [50], [51] although producing promising results on the Q values of the inductors, as high as 50, the frequencies of these technologies are also currently limited around 10 MHz [8].…”

Section: E Inductorsmentioning

confidence: 99%

“…In [8] two types of integrated power supplies are defined, Power Supply in Package (PwrSiP) and Power Supply on Chip (PwrSoC). PwrSiP integrates the power transistors and control circuitry monolithically, with the energy storage integrated into the package, e.g.…”

Section: Introductionmentioning

confidence: 99%

“…A possible solution would be excluding the inductors using a switched capacitor network [15], [16], however these are often not efficient outside their optimum voltage conversion ratio [17]. Achieving an efficient PwrSoC solution would require an inductor having a high quality factor [8], [18]. The PwrSiP products available have power densities of 0.2-0.5 W/mm 3 , and efficiencies around 90-95 % [8].…”

Section: Introductionmentioning

confidence: 99%

“…Achieving an efficient PwrSoC solution would require an inductor having a high quality factor [8], [18]. The PwrSiP products available have power densities of 0.2-0.5 W/mm 3 , and efficiencies around 90-95 % [8]. PwrSoC is still a very new concept, and research have achieved power densities comparable to the PwrSiP products with efficiencies ranging from 30-80 % [8].…”

Section: Introductionmentioning

confidence: 99%

See 4 more Smart Citations

Integrated Very-High-Frequency Switch Mode Power Supplies: Design Considerations

Hertel

Nour

Knott

2018

IEEE J. Emerg. Sel. Topics Power Electron.

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Abstract-This paper presents a power supply using an increased switching frequency to minimize the size of energy storing components, thereby addressing the demands for increased power densities in power supplies. 100 MHz and higher switching frequencies have been used in resonant power converters, which along with the possible integration of passive components on silicon wafer, present a beneficial solution in applications such as mobile phones. This paper presents a design for a 9 W class E resonant power converter in an 0.18 µm CMOS process. The converter is driven by a self oscillating gate drive, which is presented in an in-depth mathematical analysis. The gate resistance of the designed transistors is of critical importance in order to achieve the correct phase shift required for zero-voltageswitching. The Z-parameter method is used to characterize the transistors which is verified through simulations. The required spiral inductors was modeled, and simulations show Q values of as high as 14 at a switching frequency of 250 MHz. Simulations of the converter show an efficiency of 55 % with a self oscillating gate drive. However the modeled inductor was not adequate for operating with the self oscillating gate drive, presenting a future challenge for power supplies on chip.

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Section: E Inductorsmentioning

confidence: 99%