Review of Ka-Band Power Amplifier

Wang, Zhong; Hu, Shanwen; Gu, Ling; Lin, Lujun

doi:10.3390/electronics11060942

Cited by 7 publications

(2 citation statements)

References 96 publications

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“…This technique allows for the restoration of the input signal envelope, with increased amplitude and overall efficiency. Since the signal envelope loses information after being divided, it becomes possible to utilize high-efficiency power amplifiers to achieve a balance between efficiency and linearity [9].…”

Section: ░ 1 Introductionmentioning

confidence: 99%

Design and Implementation of a Two-Frequency Power Amplifier without Interference for Wireless Communication

Saad Ahmed,

Jasim Hadi Al-Chaabawi,

Atiyah Itwayya

2023

IJEER

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In this research paper, we will delve into a type of circuit known as a power amplifier. This circuit is designed to operate at two frequencies, allowing it to perform tasks at each frequency. The main goals of the design are to separate signals and ensure proper operation of the circuit in different modes. One notable feature of this power amplifier is its ability to work without any distortion, especially when both frequencies are used simultaneously. Achieving this has been made possible by combining a method that ensures signal termination with a strategy that enables their separation. To evaluate its performance, we conducted computer simulations as tests using both large signals. The findings indicate a 10.2 decibel increase in amplification, with an output power of 41.2 decibels measured in milliwatts (dBm) and an overall power efficiency of 40.2% at a frequency of 1.8 gigahertz. Furthermore, our research reveals that the suppression of signals for the 1.8 GHz band is reduced by 49 decibels compared to the original signal, while for the 2.6 GHz band, almost all traces of the second harmonic signal are completely eliminated. In addition, we propose a circuit that mitigates mixing outcomes and enhances linearity performance. The EDA software, Path Wave EM Design, is used for simulation purposes.

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Section: ░ 1 Introductionmentioning

confidence: 99%

Design and Implementation of a Two-Frequency Power Amplifier without Interference for Wireless Communication

Saad Ahmed,

Jasim Hadi Al-Chaabawi,

Atiyah Itwayya

2023

IJEER

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“…Gallium arsenide (GaAs) heterojunction bipolar transistors and pseudo-morphic high-electron-mobility transistors (HEMT) offer higher power density and gain. GaAs technology is traditionally used in RF PAs [3,4]. However, for sub-6 GHz microcell applications that require high output power, gallium nitride (GaN) HEMT technology offers clear advantages.…”

Section: Introductionmentioning

confidence: 99%

High-Efficiency and Cost-Effective 10 W Broadband Continuous Class-J Mode Quasi-MMIC Power Amplifier Design Utilizing 0.25 μm GaN/SiC and GaAs IPD Technology for 5G NR n77 and n78 Bands

Chiou,

Lin,

Chang

2023

Electronics

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This paper presents two power amplifiers designed for 5G NR n77 and n78 bands. These power amplifiers were fabricated using WINTM Semiconductors’ 0.25 μm GaN/SiC technology and GaAs IPD technology. To achieve a reduction in costs, GaAs IPD technology was incorporated in the design, leading to the realization of a quasi-monolithic microwave integrated circuit design. To ensure high power, high efficiency, and broadband operation, a continuous Class-J mode output matching network was utilized. The power amplifier with split chip-on-board wire-bond assembly had a power gain of 21.7 dB, a 3 dB power bandwidth ranging from 2.85 GHz to 4.48 GHz, a saturation power of 40.3 dBm, and a peak power-added efficiency of 39.5%. On the other hand, the power amplifier with stack chip-on-board wire-bond assembly had a power gain of 21.7 dB, a 3 dB power bandwidth ranging from 2.84 GHz to 4.47 GHz, a saturation power of 40 dBm, and a peak power-added efficiency of 36.5%. For a 5G NR FR1 256-QAM 100-MHz bandwidth modulated signal with a frequency range of 3.3 GHz to 4.2 GHz, both the split and stack chip-on-board wire-bond assembly power amplifiers achieved average output powers of 29.6 dBm and 28.3 dBm, respectively. These output powers were measured under an error vector magnitude requirement of 3.5%.

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Dielectric spectroscopy and synergistic effects in epoxy composites filled with multi‐walled carbon nanotubes and carbon‐coated copper nanoparticles

Tsyhanok,

Meisak,

Banys

et al. 2024

Polymer Composites

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The electromagnetic properties of epoxy‐based composites filled with carbon‐coated copper (Cu@C) nanoparticles and multi‐walled carbon nanotubes (MWCNTs), along with hybrid MWCNT/Cu@C/Epoxy systems containing varying concentrations of nanoinclusions, were systematically investigated across multiple frequency and temperature ranges. Measurements were conducted in the low‐frequency range (20 Hz–1 MHz) and over a temperature span of 40–500 K, as well as in the microwave frequency range (26–37 GHz) at room temperature. The percolation threshold was identified at approximately 2.5 vol% for composites containing only Cu@C nanoparticles and at 0.3 vol% for composites with MWCNTs. Notably, the hybrid MWCNT/Cu@C/Epoxy composites exhibited significantly enhanced electromagnetic properties compared to those of the single‐filled systems. At room temperature, an epoxy composite containing 5 vol% Cu@C and 1 vol% MWCNT exhibits a conductivity of approximately 4 × 10−2 S/m, which increases by nearly two orders of magnitude following a thermal cycle up to 500 K. The total electromagnetic interference (EMI) shielding effectiveness in the 26–37 GHz range was measured between 4 and 9 dB, indicating the material's promising potential for attenuating microwave noise. Dynamic mechanical analysis (DMA) results revealed that increasing the MWCNT content improved the storage modulus of the composites but led to a reduction in the glass transition temperature (Tg), which was observed to range between 40 and 50°C. The incorporation of MWCNTs and Cu@C nanoparticles into epoxy matrices offers a promising approach for the development of lightweight multifunctional composites with superior electrical, mechanical, and EMI shielding properties.Highlights The percolation threshold in MWCNT/Epoxy composites is 0.3%. The percolation threshold in Cu@C/Epoxy composites is 2%. The conductivity value of MWCNT/Cu@C/Epoxy composites is around 4 × 10−2 S/m. The total shielding effectiveness in the Ka‐band range between 4 and 9 dB. Glass transition temperature of MWCNT/Cu@C/Epoxy is between 40 and 50°C.

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Review of Ka-Band Power Amplifier

Cited by 7 publications

References 96 publications

Design and Implementation of a Two-Frequency Power Amplifier without Interference for Wireless Communication

Design and Implementation of a Two-Frequency Power Amplifier without Interference for Wireless Communication

High-Efficiency and Cost-Effective 10 W Broadband Continuous Class-J Mode Quasi-MMIC Power Amplifier Design Utilizing 0.25 μm GaN/SiC and GaAs IPD Technology for 5G NR n77 and n78 Bands

Dielectric spectroscopy and synergistic effects in epoxy composites filled with multi‐walled carbon nanotubes and carbon‐coated copper nanoparticles

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