Review of Millimeter-Wave Integrated Circuits With Low Power Consumption for High Speed Wireless Communications

Ellinger, Frank; Fritsche, David; Tretter, Gregor; Leufker, Jan Dirk; Yodprasit, Uroschanit; Carta, Corrado

doi:10.1515/freq-2016-0119

Cited by 4 publications

(2 citation statements)

References 27 publications

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“…This advantage comes from the improvement of the received signal by the gain factor of the mixer and IF amplifier components, enabling the detection of weak signals. Moreover, the signal can also be boosted by a low noise amplifier before it is downconverted into an IF signal in the case of FET-based heterodyne imager at sub-THz applications [26]. However, additional noise contribution from the nonlinear components has a drawback in limited noise performance reduction compared with responsivity improvement capability.…”

Section: A Measurement Methodsmentioning

confidence: 99%

Input Power and Effective Area in Terahertz Detector Measurement: A Review

2023

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The field of terahertz (THz) science and technology research area have been exponentially growing recently, motivated by the increasing demand for safer security imaging, better quality control within manufacturing industries, space and astronomical investigation, biomedical diagnostics, and larger communication bandwidth. The THz waves detection mechanism is one of the critical components in developing a high efficiency and high sensitivity THz communication system. This paper reviews the principle and instrumentation of THz optical metrology for the precise and accurate characterization of THz detectors in the range of 0.1 THz to several THz. In this context, we individually discuss the determination of radiation input power and effective area followed by a survey of THz optical measurement methodology used in the state-of-the-art THz detectors. In addition, challenging issues remaining in the THz detector measurements are provided. This paper sets out a guideline to address the main concept behind the THz detector measurement as well as their challenges and opportunities. Additionally, useful insight is given through a summary of available power meter instrumentation for THz input power calibration.INDEX TERMS THz detectors, THz input power, effective area, THz metrology, antenna, THz measurements, THz instrumentation.

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Section: A Measurement Methodsmentioning

confidence: 99%

Input Power and Effective Area in Terahertz Detector Measurement: A Review

2023

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“…In order to achieve high-speed data transfer, the frequency of digital signals has been increased. 1) , 2) In general, an electronic device is manufactured by assembling electronic components such as capacitors and diodes on a printed circuit board (PCB) , which involves printing a metal wiring pattern on a resin material. 3) -7) When an alternating current flows in a metal wiring pattern on a PCB, energy is lost and heat is generated.…”

Section: Introductionmentioning

confidence: 99%

Surface Modification of Fluoropolymer Using Open-Air Plasma Treatment at Atmospheric Pressure with Ar, Ar＋O<sub>2</sub>, and Ar＋H<sub>2</sub> for Application in HighAdhesion Metal Wiring Patterns

Kodama

Ohkubo

Oshita

et al. 2018

Journal of the Surface Finishing Society of Japan

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We performed open-air plasma treatment of polytetrafluoroethylene (PTFE) at atmospheric pressure to increase the adhesion strength between PTFE and an Ag metal film formed from Ag ink. Coloration of the PTFE surface occurred during 600 s treatment with Ar plasma. The Ag/PTFE adhesion strength was 0.06 N/mm. To resolve the problem of coloration and to improve the adhesion strength, O2 or H2 gas was added. During treatment with Ar + O2 plasma with O2 content of 0.33% for 600 s, no coloration occurred but the adhesion strength decreased to zero. During treatment with Ar + H2 plasma for 600 s, coloration did not occur. Moreover, the adhesion strength increased to 0.25-0.55 N/mm. These results showed that H2 addition was effective for preventing coloration and improving adhesion strength during long-period plasma treatment. Furthermore, the uniformity of surface treatment with Ar + H2 plasma was higher than that for Ar plasma.

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Heterodyne terahertz detection based on antenna-coupled AlGaN/GaN high-electron-mobility transistor

Feng

Zhu

Ding

et al. 2022

Applied Physics Letters

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In this article, we report an antenna-coupled AlGaN/GaN high-electron-mobility transistor integrated on a hyper-hemispheric silicon lens for heterodyne detection in a 340 GHz band at room temperature. The responsivity, elevated shot noise, flicker noise, and dynamic source-drain resistance for homodyne and heterodyne detection are characterized and analyzed at different local terahertz (LO) power levels. With a LO power of only −3.9 dBm, the detector offers a conversion loss less than 28 dB and a noise-equivalent power (NEP) about −132 dBm/Hz. A threshold LO power about −5 dBm is identified above which the shot noise becomes the dominant noise source, and the intermediate-frequency response is strongly suppressed. The elevated noise and the saturation in responsivity are found to be closely related to the strong direct-current homodyne current and the charge modulation/accumulation by the LO signal. Possible solutions are discussed to further reduce the NEP and the conversion loss.

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Review of Millimeter-Wave Integrated Circuits With Low Power Consumption for High Speed Wireless Communications

Cited by 4 publications

References 27 publications

Input Power and Effective Area in Terahertz Detector Measurement: A Review

Input Power and Effective Area in Terahertz Detector Measurement: A Review

Surface Modification of Fluoropolymer Using Open-Air Plasma Treatment at Atmospheric Pressure with Ar, Ar＋O<sub>2</sub>, and Ar＋H<sub>2</sub> for Application in HighAdhesion Metal Wiring Patterns

Heterodyne terahertz detection based on antenna-coupled AlGaN/GaN high-electron-mobility transistor

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