Review of performance metrics of spin qubits in gated semiconducting nanostructures

Stano, Peter; Loss, Daniel

doi:10.1038/s42254-022-00484-w

Cited by 74 publications

(33 citation statements)

References 318 publications

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“…Spin qubits in semiconductor quantum dots are a promising platform for quantum information processing. − Group IV semiconductors such as silicon and germanium can be isotopically purified, enabling long quantum coherence , high-fidelity single-qubit − and two-qubit gates − as well as multi-qubit operation. , Spin qubits can be operated at comparatively high temperatures, − and their compatibility with semiconductor technologies spurred the realization of qubits made in industrial foundries. , However, implementing more than a few qubits on a single chip remains extremely challenging.…”

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confidence: 99%

Electrical Control of Uniformity in Quantum Dot Devices

et al. 2023

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Highly uniform quantum systems are essential for the practical implementation of scalable quantum processors. While quantum dot spin qubits based on semiconductor technology are a promising platform for large-scale quantum computing, their small size makes them particularly sensitive to their local environment. Here, we present a method to electrically obtain a high degree of uniformity in the intrinsic potential landscape using hysteretic shifts of the gate voltage characteristics. We demonstrate the tuning of pinch-off voltages in quantum dot devices over hundreds of millivolts that then remain stable at least for hours. Applying our method, we homogenize the pinch-off voltages of the plunger gates in a linear array for four quantum dots, reducing the spread in pinch-off voltages by one order of magnitude. This work provides a new tool for the tuning of quantum dot devices and offers new perspectives for the implementation of scalable spin qubit arrays.

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confidence: 99%

Electrical Control of Uniformity in Quantum Dot Devices

et al. 2023

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“…The best-fit value γ = 0.34 yields again α ≈ 0.5. For the largest sequence of 256 π pulses, we find T CPMG 2 = 0.4 ms, an exceptionally long coherence for a hole spin 34 . Finally, to gain insight into the low-frequency noise acting on the hole spin, we perform systematic measurements of the inhomogeneous dephasing time T * 2 .…”

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confidence: 80%

“…15 )) and germanium (3.8 μs (ref. 23 )) 34 . In addition, we notice that spin control remains efficient at all angles including θ zx = 99 ∘ , where we could readily achieve Rabi frequencies F Rabi as large as 5 MHz limited by the attenuation on the microwave line.…”

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confidence: 99%

A single hole spin with enhanced coherence in natural silicon

Piot

Schmitt

et al. 2022

Nat. Nanotechnol.

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Semiconductor spin qubits based on spin–orbit states are responsive to electric field excitations, allowing for practical, fast and potentially scalable qubit control. Spin electric susceptibility, however, renders these qubits generally vulnerable to electrical noise, which limits their coherence time. Here we report on a spin–orbit qubit consisting of a single hole electrostatically confined in a natural silicon metal-oxide-semiconductor device. By varying the magnetic field orientation, we reveal the existence of operation sweet spots where the impact of charge noise is minimized while preserving an efficient electric-dipole spin control. We correspondingly observe an extension of the Hahn-echo coherence time up to 88 μs, exceeding by an order of magnitude existing values reported for hole spin qubits, and approaching the state-of-the-art for electron spin qubits with synthetic spin–orbit coupling in isotopically purified silicon. Our finding enhances the prospects of silicon-based hole spin qubits for scalable quantum information processing.

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“…One of the promising platforms to realize large-scale quantum computers is spin qubits based on semiconductor quantum dots [1][2][3][4]. They can be operated with high fidelities [5][6][7][8] and are considered suitable for large-scale integration in the future owing to high compatibility with conventional CMOS technologies [9][10][11][12].…”

Section: Introductionmentioning

confidence: 99%

Contact Pad Design Considerations for Semiconductor Qubit Devices for Reducing On-Chip Microwave Crosstalk

Tomari

Yoneda

Kodera

2023

IEICE Trans. Electron.

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Reducing on-chip microwave crosstalk is crucial for semiconductor spin qubit integration. Toward crosstalk reduction and qubit integration, we investigate on-chip microwave crosstalk for gate electrode pad designs with (i) etched trenches between contact pads or (ii) contact pads with reduced sizes. We conclude that the design with feature (ii) is advantageous for high-density integration of semiconductor qubits with small crosstalk (below -25 dB at 6 GHz), favoring the introduction of flipchip bonding.

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Review of performance metrics of spin qubits in gated semiconducting nanostructures

Cited by 74 publications

References 318 publications

Electrical Control of Uniformity in Quantum Dot Devices

Electrical Control of Uniformity in Quantum Dot Devices

A single hole spin with enhanced coherence in natural silicon

Contact Pad Design Considerations for Semiconductor Qubit Devices for Reducing On-Chip Microwave Crosstalk

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