Review of plasma-enhanced atomic layer deposition: Technical enabler of nanoscale device fabrication

Oh, Il‐Kwon

doi:10.7567/jjap.53.03da01

Cited by 96 publications

(42 citation statements)

References 36 publications

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“…4 with greater detail given in S3. The dry methods involve processes such as thermal and plasma-assisted atomic layer deposition [59][60][61][62] sputtering and evaporation [63][64][65] and the wet methods [66][67] include application of inks and pastes or chemical sprays with subsequent thermal processing. These processes work best for chemically uncomplicated, amorphous materials or composites using nanoparticles.…”

Section: Please Do Not Adjust Marginsmentioning

confidence: 99%

Practical challenges in the development of photoelectrochemical solar fuels production

Spitler

Modestino

Deutsch

et al. 2020

Sustainable Energy Fuels

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Section: Please Do Not Adjust Marginsmentioning

confidence: 99%

Practical challenges in the development of photoelectrochemical solar fuels production

Spitler

Modestino

Deutsch

et al. 2020

Sustainable Energy Fuels

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“…These advantages include precise thickness control, relatively low growth temperature, and conformality, i.e., the ability to deposit a film with a uniform thickness over a non‐flat substrate . All of these benefits make this method suitable for growing ultrathin films, where thickness and structure are critical parameters …”

Section: Introductionmentioning

confidence: 99%

In Situ Synchrotron X‐Ray Diffraction Analysis of Phase Transformation in Epitaxial Metastable hcp Nickel Thin Films, Prepared via Plasma‐Enhanced Atomic Layer Deposition

Motamedi

Bosnick

Cadien

et al. 2018

Adv Materials Inter

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thickness and the crystal structure are necessary requirements. [15,16] Epitaxial growth of magnetic thin films enables the precise control of strain and crystal orientation, both of which have critical effects on the magnetization of thin films. [17,18] Another important benefit of epitaxial growth is limiting the grain boundary diffusion, which is shown to play a critical role in interlayer diffusion of the multilayer ultrathin films. [19,20] In order to fully realize the benefits of the ultrathin magnetic films, they need to be grown in an epitaxial fashion with a fine-tuned crystal structure and orientation. This subject is explored in the present paper.Plasma-enhanced atomic layer deposition (PEALD) is a method for the deposition of Ni films that offers several advantages over more mainstream deposition methods, such as sputtering and chemical vapor deposition (CVD). These advantages include precise thickness control, relatively low growth temperature, and conformality, i.e., the ability to deposit a film with a uniform thickness over a non-flat substrate. [21][22][23] All of these benefits make this method suitable for growing ultrathin films, where thickness and structure are critical parameters. [24] The authors have previously reported the plasma-enhanced ALD growth and characterization of nickel thin films with quasi-epitaxial crystal structure. [25] As reported, increasing the deposition temperature resulted in improving the crystallinity of the films. At deposition temperature of 360 °C, chemically pure nickel films were deposited. Crystal structure analysis showed the films had a polycrystalline textured structure with a strong out-of-plane orientation relationship with the sapphire substrate. However, full epitaxial growth was not achieved. This issue has been addressed in this paper.Apart from the above-mentioned publication, there have been other recent reports on nickel deposition. Park et al. [26] recently reported on PEALD of nickel thin films using [Ni(dpdab) 2 ] and NH 3 plasma, with the films reportedly having a fcc polycrystalline structure. In a separate study, Suturin et al. [27] demonstrated the deposition of epitaxial nickel islands on CaF 2 at 600 °C, using an electron beam source. The isolated islands had fcc crystal structure and crystallographic orientations dictated by that of the substrate. On a related subject, Tarachand et al. [28] investigated phase structure and magnetism in nickel nanoparticles grown by thermal decomposition, and reported that the Ultrathin metal films have a wide variety of applications, especially in microelectronics. A key method to deposit these films is plasma-enhanced atomic layer deposition (PEALD), which is known for its ability to deposit thin films conformally and at relatively low temperatures. Building on the recent work, an improved recipe is reported on for the development of nickel PEALD technology, through which fully epitaxial nickel thin films are deposited. The effect of continuous heating on the phase structure and agglomeration in the met...

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“…Although excellent review articles on general ALD overview [3][4][5][6][7][8], specific ALD methods [9][10][11], nano-materials [12][13][14][15], and application areas [16][17][18][19] exist in the literature, an effort focusing on ALD-grown nanoscale semiconductors and their applications is yet missing. The aim of this review is to present the status and summary of the ALD semiconductor research activity by covering critical findings and contributions in the field.…”

Section: Introductionmentioning

confidence: 99%

Atomic layer deposition: an enabling technology for the growth of functional nanoscale semiconductors

Bıyıklı

Haider

2017

Semicond. Sci. Technol.

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In this paper, we present the progress in the growth of nanoscale semiconductors grown via atomic layer deposition (ALD). After the adoption by semiconductor chip industry, ALD became a widespread tool to grow functional films and conformal ultra-thin coatings for various applications. Based on self-limiting and ligand-exchange-based surface reactions, ALD enabled the low-temperature growth of nanoscale dielectric, metal, and semiconductor materials. Being able to deposit wafer-scale uniform semiconductor films at relatively low-temperatures, with sub-monolayer thickness control and ultimate conformality, makes ALD attractive for semiconductor device applications. Towards this end, precursors and low-temperature growth recipes are developed to deposit crystalline thin films for compound and elemental semiconductors. Conventional thermal ALD as well as plasma-assisted and radical-enhanced techniques have been exploited to achieve device-compatible film quality. Metal-oxides, III-nitrides, sulfides, and selenides are among the most popular semiconductor material families studied via ALD technology. Besides thin films, ALD can grow nanostructured semiconductors as well using either template-assisted growth methods or bottom-up controlled nucleation mechanisms. Among the demonstrated semiconductor nanostructures are nanoparticles, nano/ quantum-dots, nanowires, nanotubes, nanofibers, nanopillars, hollow and core-shell versions of the afore-mentioned nanostructures, and 2D materials including transition metal dichalcogenides and graphene. ALD-grown nanoscale semiconductor materials find applications in a vast amount of applications including functional coatings, catalysis and photocatalysis, renewable energy conversion and storage, chemical sensing, opto-electronics, and flexible electronics. In this review, we give an overview of the current state-of-the-art in ALD-based nanoscale semiconductor research including the already demonstrated and future applications.

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Review of plasma-enhanced atomic layer deposition: Technical enabler of nanoscale device fabrication

Cited by 96 publications

References 36 publications

Practical challenges in the development of photoelectrochemical solar fuels production

Practical challenges in the development of photoelectrochemical solar fuels production

In Situ Synchrotron X‐Ray Diffraction Analysis of Phase Transformation in Epitaxial Metastable hcp Nickel Thin Films, Prepared via Plasma‐Enhanced Atomic Layer Deposition

Atomic layer deposition: an enabling technology for the growth of functional nanoscale semiconductors

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