Review of pyroelectric thermal energy harvesting and new MEMs-based resonant energy conversion techniques

Hunter, S. R.; Lavrik, Nickolay V.; Mostafa, Salwa; Rajic, Slobodan; Datskos, Panos G.

doi:10.1117/12.920978

Cited by 35 publications

(43 citation statements)

References 32 publications

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“…[1][2][3] The key loss mechanisms in these systems are heat conduction and radiation; therefore, it is imperative to minimize heat losses on small device scales. [1][2][3] The key loss mechanisms in these systems are heat conduction and radiation; therefore, it is imperative to minimize heat losses on small device scales.…”

Section: Introductionmentioning

confidence: 99%

Low emissivity high-temperature tantalum thin film coatings for silicon devices

Rinnerbauer

Senkevich

Joannopoulos

et al. 2012

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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Mechanical properties, stress evolution and high-temperature thermal stability of nanolayered Mo-Si-N/SiC thin films J.The authors study the use of thin ($230 nm) tantalum (Ta) layers on silicon (Si) as a low emissivity (high reflectivity) coating for high-temperature Si devices. Such coatings are critical to reduce parasitic radiation loss, which is one of the dominant loss mechanisms at high temperatures (above 700 C). The key factors to achieve such a coating are low emissivity in the near infrared and superior thermal stability at high operating temperatures. The authors investigated the emissivity of Ta coatings deposited on Si with respect to deposition parameters, and annealing conditions, and temperature. The authors found that after annealing at temperatures ! 900 C the emissivity in the near infrared (1 À 3 lm) was reduced by a factor of 2 as compared to bare Si. In addition, the authors measured thermal emission at temperatures from 700 to 1000 C, which is stable up to a heater temperature equal to the annealing temperature. Furthermore, Auger electron spectroscopy profiles of the coatings before and after annealing were taken to evaluate thermal stability. A thin (about 70 nm) Ta 2 O 5 layer was found to act as an efficient diffusion barrier between the Si substrate and the Ta layer to prevent Si diffusion.

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Section: Introductionmentioning

confidence: 99%

Low emissivity high-temperature tantalum thin film coatings for silicon devices

Rinnerbauer

Senkevich

Joannopoulos

et al. 2012

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

View full text Add to dashboard Cite

show abstract

“…Verified models show that a novel MEMS device [9] providing five times the energy density of thermoelectric generators can be made using well-established fabrication processes, but the technology has not yet been demonstrated on that scale. The pyroelectric material used in these devices can function at even higher temperatures than thermoelectric materials.…”

Section: Thermal Energy Harvestersmentioning

confidence: 99%

“…Most human-induced and naturally occurring temporal temperature changes are so slow that their thermal cycle times (seconds, minutes, hours, days, or even longer) are too long to be useful for energy harvesting [9]. Temperature changes that are large enough and fast enough to generate substantial amounts of electricity must be created artificially.…”

Section: Thermal Sourcesmentioning

confidence: 99%

“…A novel device [9] exploits a difference in temperature between two surfaces to create a rapidly changing thermal environment for a small layer of pyroelectric material, resulting in a power generation density that compares favorably with any thermoelectric implementation.…”

Section: Pyroelectric Cantilevermentioning

confidence: 99%

“…The output of this pyroelectric converter can be determined given the applied bias voltage (V a ), capacitor surface area (A), and the material's pyroelectric coefficient (p) [43]:…”

Section: Figure 15 a Pyroelectric Bimorph Cantilevermentioning

confidence: 99%

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