Review of Resistance Switching of Ferroelectrics and Oxides in Quest for Unconventional Electronic Mechanisms

Watanabe, Yoshihisa

doi:10.1080/00150190701261031

Cited by 40 publications

(39 citation statements)

References 72 publications

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“…The combination of local electromechanical and conductivity measurements revealed a connection between local current and pinning at bicrystal grain boundaries in bismuth ferrite (Rodriguez et al, 2008). Electroresistance in ferroelectric structures was recently reviewed by Watanabe (2007). The presence of extended defects and oxygen vacancy accumulation has been shown to influence transport mechanisms at domain walls (Seidel et al, 2010).…”

Section: B Scanning Probe Microscopymentioning

confidence: 99%

Domain wall nanoelectronics

et al. 2012

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Domains in ferroelectrics were considered to be well understood by the middle of the last century: They were generally rectilinear, and their walls were Ising-like. Their simplicity stood in stark contrast to the more complex Bloch walls or Néel walls in magnets. Only within the past decade and with the introduction of atomic-resolution studies via transmission electron microscopy, electron holography, and atomic force microscopy with polarization sensitivity has their real complexity been revealed. Additional phenomena appear in recent studies, especially of magnetoelectric materials, where functional properties inside domain walls are being directly measured. In this paper these studies are reviewed, focusing attention on ferroelectrics and multiferroics but making comparisons where possible with magnetic domains and domain walls. An important part of this review will concern device applications, with the spotlight on a new paradigm of ferroic devices where the domain walls, rather than the domains, are the active element. Here magnetic wall microelectronics is already in full swing, owing largely to the work of Cowburn and of Parkin and their colleagues. These devices exploit the high domain wall mobilities in magnets and their resulting high velocities, which can be supersonic, as shown by Kreines' and co-workers 30 years ago. By comparison, nanoelectronic devices employing ferroelectric domain walls often have slower domain wall speeds, but may exploit their smaller size as well as their different functional properties. These include domain wall conductivity (metallic or even superconducting in bulk insulating or semiconducting oxides) and the fact that domain walls can be ferromagnetic while the surrounding domains are not.

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Section: B Scanning Probe Microscopymentioning

confidence: 99%

Domain wall nanoelectronics

et al. 2012

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“…3, the current flows more during decreasing ͉V͉ rather than increasing ͉V͉, which is very much similar as that found in the contaminated Schottky barriers on Si. 20 Another interesting feature in Fig. 3 is the strong dopant dependence of I-V characteristics.…”

mentioning

confidence: 99%

Enhanced ferroelectric and piezoelectric properties in doped lead-free (Bi0.5Na0.5)0.94Ba0.06TiO3 thin films

Wang

Chan

et al. 2010

Applied Physics Letters

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Doping effects with respect to the electrical properties of morphotropic phase boundary ͑Bi 0.5 Na 0.5 ͒ 0.94 Ba 0.06 TiO 3 thin films epitaxially grown on CaRuO 3 electroded ͑LaAlO 3 ͒ 0.3 ͑Sr 2 AlTaO 6 ͒ 0.35 ͑001͒ substrates were investigated. Substantial enhancement of ferroelectricity and piezoelectricity has been achieved in La+ Ce codoped films with a remanent polarization P r of 29.5 C / cm 2 and a remanent piezoelectric coefficient d 33,f of 31 pm/V, whereas Mn doping seems more favorite to reduce the leakage current by two order of magnitude. Both doped films exhibited diodelike I-V characteristics, which are correlated with resistance switching effect. © 2010 American Institute of Physics. ͓doi:10.1063/1.3518484͔Due to the increasing environmental and biological concerns on high toxicity of lead present in the widely used Pb͑Zr, Ti͒O 3 ͑PZT͒ family, considerable attention has been drawn to develop lead-free ferroelectric materials in the past two decades. 1 Among various potential lead-free piezoelectric ceramics, A-site complex perovskite ͑Bi 0.5 Na 0.5 ͒TiO 3 ͑BNT͒ is considered to be one of the strong candidates because of its marked ferroelectricity/piezoelectricity. 2,3 The pioneer work by Takenaka et al. 4 demonstrated that rhombohedral ͑F ␣ ͒-tetragonal ͑F ␤ ͒ morphotropic phase boundary ͑MPB͒ in ͑Bi 0.5 Na 0.5 ͒TiO 3 -BaTiO 3 ͑BNBT͒ binary system is remarkably effective in promoting piezoelectric properties. Subsequent studies revealed the piezoelectric performance of BNBT ceramics with MPB composition could be further enhanced by appropriate dopants. [5][6][7] In spite of the numerous studies on BNT-based single crystals and ceramics, literature tackling with the growth and characterization of BNT-based, especially BNBT-based thin films, still remains at an infancy stage. [8][9][10][11][12] Consequently, doping effects on the electrical properties of thin film BNBT materials are still unclear. Abazari et al. 13 has recently reported epitaxial potassium modified BNBT thin films grown on SrRuO 3 coated SrTiO 3 substrates by pulsed laser deposition ͑PLD͒. Dielectric and piezoelectric properties of the films were evaluated macroscopically. However, the nanoscale characterization of piezoresponse of doped BNBT thin films is still missing. In this letter, thin films of La+ Ce codoped and Mn-doped BNBT with composition in the vicinity of MPB are epitaxially deposited on CaRuO 3 ͑CRO͒ electroded ͑LaAlO 3 ͒ 0.3 ͑Sr 2 AlTaO 6 ͒ 0.35 ͑LSAT͒ ͑001͒ singlecrystal substrates by PLD. Effects of dopants on ferroelectric, dielectric, leakage current, and local piezoelectric properties of the BNBT-based thin films are investigated.The 10% Bi-enriched targets of ͑Bi 0.5 Na 0.5 ͒ 0.94 Ba 0.06 TiO 3 + 0.5 mol % CeO 2 + 0.5 mol % La 2 O 3 ͑BNBT-LaCe͒, ͑Bi 0.5 Na 0.5 ͒ 0.94 Ba 0.06 TiO 3 + 0.5 mol % MnO 2 ͑BN-BTMn͒ used for laser ablation were fabricated by the conventional solid state reaction route. The substrates were cubic ͑001͒-oriented LSAT ͑a = 3.868 Å͒, which were first coated a layer of CRO ͑ϳ40 nm͒ by PLD...

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“…15 In recent years, much scientific knowledge has been gained on the basic ingredients of the resistive switching effect in these material systems and a lot of promising results have been reported. [12][13][14] However, the emergence of macroscopic switching effects from local microscopic events, the role of disorder during the switching process and the stochastic fluctuations in device performance are some of the open questions which need still to be addressed prior to industrial qualification.…”

Section: Introductionmentioning

confidence: 99%

“…In recent years, an enormous range of materials in metal-insulator-metal configurations has been reported to show hysteretic resistance switching behavior. [1][2][3][4][5][6][7][8][9][10][11][12][13][14] Attractive properties of resistive switching memory devices, commonly known as resistive random access memory (RRAM), are low fabrication costs, scalability into the nanometer regime, fast write and read access, low power consumption and low threshold voltages. 15 Solid electrolyte materials such as Ag and Cu doped amorphous Ge-Se (Ref.…”

Section: Introductionmentioning

confidence: 99%

On the stochastic nature of resistive switching in Cu doped Ge0.3Se0.7 based memory devices

Soni

Meuffels

Staikov

et al. 2011

Journal of Applied Physics

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Currently, there is great interest in using solid electrolytes to develop resistive switching based nonvolatile memories (RRAM) and logic devices. Despite recent progress, our understanding of the microscopic origin of the switching process and its stochastic behavior is still limited. In order to understand this behavior, we present a statistical "breakdown" analysis performed on Cu doped Ge 0.3 Se 0.7 based memory devices under elevated temperature and constant voltage stress conditions. Following the approach of electrochemical phase formation, the precursor of the "ON resistance switching" is considered to be nucleation -the emergence of small clusters of atoms carrying the basic properties of the new phase which forms the conducting filament. Within the framework of nucleation theory, the observed fluctuations in the time required for "ON resistance switching" are found to be consistent with the stochastic nature of critical nucleus formation.

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Review of Resistance Switching of Ferroelectrics and Oxides in Quest for Unconventional Electronic Mechanisms

Cited by 40 publications

References 72 publications

Domain wall nanoelectronics

Domain wall nanoelectronics

Enhanced ferroelectric and piezoelectric properties in doped lead-free (Bi0.5Na0.5)0.94Ba0.06TiO3 thin films

On the stochastic nature of resistive switching in Cu doped Ge0.3Se0.7 based memory devices

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