Review on III–V Semiconductor Nanowire Array Infrared Photodetectors

Abstract

In recent years, III-V semiconductor nanowires have been widely investigated for infrared photodetector applications due to their direct and suitable bandgap, unique optical and electrical properties, flexibility in device design and to create heterostructures, and/or grow on a foreign substrate such as Si with more effective strain relaxation compared with planar structures. In particular, vertically aligned and ordered nanowire arrays have emerged as a promising photodetector platform, since their geometry-related light absorption and carrier transport properties can be tailored to achieve high photodetector performance and new functionalities. In this article, the state-of-the-art progress in the development of various types of infrared photodetectors based on III-V semiconductor nanowire arrays is reviewed. The nanowire synthesis/fabrication methods are introduced briefly at first, followed by discussions on the working principle and device performance of various types of nanowire array-based photodetectors and their emerging applications. Finally, we analyze the challenges and present the perspectives for the development of future low-cost, large-scale, high-performance nanowire array infrared photodetectors for practical applications.

IEEE Summer School on Nanotechnology [Column]

“…Besides the mentioned methods, thin film nanotechnology-fabrication and thickness measurement were presented for the learners to explore the concepts. To appreciate the importance of the fabrication methods of nanomaterials, III-V semiconductor nanowires materials and devices were discussed to explain their suitability for fabricating nanowires based on their excellent optoelectronic properties [10]. Subsequently, 1D nanowires gained significant attention for next-generation low-cost technology in solar energy harvesters and light emitters.…”

Growth, Crystal Structure, and Photoluminescent Properties of Dilute Nitride InAsN Nanowires on Silicon for Infrared Optoelectronics

“…This also allows for the NW growth on the lattice-mismatched Si substrates, epitaxial stabilization of metastable phases, , and suppression of the composition miscibility gap . It was shown that the formation of the ordered NW arrays with a given morphology and a predetermined NW pattern can substantially improve light trapping and optical absorption. , Thus, the performance of NW-based infrared (IR) photodetectors can be improved by reducing the volume of the active detector’s region, resulting in the decrease of dark current. , …”

“…9,10 Thus, the performance of NW-based infrared (IR) photodetectors can be improved by reducing the volume of the active detector's region, resulting in the decrease of dark current. 11,12 Compared to thin-film counterparts, InAs NW-based IR detectors have a limited spectral sensitivity shifted toward higher energies, which restricts their functionality. 13 This is attributed to the crystal structure of the self-induced InAs NWs, which tend to crystallize in a metastable wurtzite (WZ) structure with a larger band gap compared to the zinc blende (ZB) structure stable in a bulk material.…”

Quantum enhanced efficiency and spectral performance of paper-based flexible photodetectors functionalized with two dimensional materials

“…Various mechanisms are employed in PDs, including the photoconductive effect, photothermoelectric effect, photovoltaic effect, and thermal detection [4]. Currently, the largest area of the photodetection market is dominated by silicon based PDs (bulk crystalline like C-Si based, Si/Ge heterojunction or semiconductor alloys based PDs) due to requirement of thick material, high cost, frangible and strictly controlled fabrication process which limited their applications in low-volume, high-value markets that can impact on night vision, infrared spectrometry and imaging application [2,[5][6][7]. Moreover, these traditional PDs are unsuitable for flexible, transparent, and bendable applications, which have become increasingly important in the development of next-generation optoelectronic devices, e-skin, smart textiles, and artificial electronic eye cameras [8].…”