Review on Resistive Switching Devices Based on Multiferroic BiFeO3

Abstract

This review provides a comprehensive examination of the state-of-the-art research on resistive switching (RS) in BiFeO<sub>3</sub> (BFO)-based memristive devices. By exploring possible fabrication techniques for preparing the functional BFO layers in memristive devices, the constructed lattice systems and corresponding crystal types responsible for RS behaviors in BFO-based memristive devices are analyzed. The physical mechanisms underlying RS in BFO-based memristive devices, i.e., ferroelectricity and valence change memory, are thoroughly reviewed, and the impact of various effects such as the doping effect, especially in the BFO layer, is evaluated. Finally, this review provides the applications of BFO devices and discusses the valid criteria for evaluating the energy consumption in RS and potential optimization techniques for memristive devices.

Memristor effect in an amorphous garnet ferrite film Y1.8Bi1.2Fe3.5Ga1.5O12

“…Bismuth ferrite BiFeO3 [10][11][12], which has ferroelectric and magnetic properties, is considered a promising material for memristor devices. The bistable current state in BiFeO3 is explained in the model of the formation of a conducting channel [13], a Schоttky bаrrier [14], and an electric polarization hysteresis loop [15].…”

Unveiling the impact of Ni2+/Y3+ co-substitution on the structural, dielectric, and impedance properties of multiferroic spinel ferrite for hydroelectric cell application

“…3 Further, the cross-coupling between these ferroic orderings can develop novel and interesting properties, like the coupling between ferroelectric and ferromagnetic properties ordering termed as magnetoelectrics, where magnetic properties can be tailored by the variation of the electric field or vice versa . 4,5 Very few materials exist to date that have the capability to show the simultaneous existence of ferroelectric and ferromagnetic properties. Spinel ferrites are a class of multiferroic materials that can exhibit significant multiferroism and magnetoelectricity.…”

Strain-Induced Structural Phase Transitions in Epitaxial (001) BiCoO3 Films: A First-Principles Study

“…The ferroelectric polarization breaks the space inversion symmetry, while the magnetic order breaks the time inversion symmetry. The couplings between these orders facilitate conditions for controlling the magnetization by an electric field and/or the polarization by a magnetic field, which open up the technological applications in the field of spintronics, microwave filters, energy storage, and resistive switching devices [ 4 , 5 , 6 ].…”