Review on the development of cryogenic silicon detectors

Casagrande, Luca; Abreu, M.C.; Bell, W. H.; Berglund, P.; Borer, K.; Buontempo, S.; Chapuy, S.; Cindro, V.; D’Ambrosio, N.; Viá, C. Da; Devine, S.R.H.; Dezillie, B.; Dimcovski, Z.; Eremin, V.; Espósito, Antonio; Granata, V.; Grigoriev, E.; Hauler, F.; Heijne, E.H.M.; Heising, S.; Jánoš, Š.; Jungermann, L.; Konorov, I.; Li, Z.; Lourenço, C.; Mikuž, M.; Niinikoski, T.; O’Shea, V.; Pagano, S.; Palmieri, V.G.; Paul, S.; Pretzl, K.; Rato, P.; Ruggiero, G.; Sonderegger, P.; Sousa, P.; Verbitskaya, E.; Watts, S.; Zavrtanik, M.

doi:10.1016/s0168-9002(00)01192-x

Cited by 13 publications

(4 citation statements)

References 3 publications

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“…The so-called Lazarus effect, the recovery of CCE in heavily irradiated Si sensors at cryogenic temperatures, have been discovered in 1998 [27], and it has been one of the main subjects for the CERN RD39 Collaboration [28]. Readers who are interested in more details of the Lazarus effect and radiation hard cryogenic Si detectors are referred to ref.…”

Section: Space Charge Transformation Due To Free Carrier Trapping (Spmentioning

confidence: 99%

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Radiation damage effects in Si materials and detectors and rad-hard Si detectors for SLHC

Li¹

2009

J. Inst.

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Silicon sensors, widely used in high energy and nuclear physics experiments, suffer severe radiation damage that leads to degradations in sensor performance. These degradations include significant increases in leakage current, bulk resistivity, space charge concentration, and free carrier trapping. For LHC applications, where the total fluence is in the order of 1x10 15 n eq /cm 2 for 10 years, the increase in space charge concentration has been the main problem since it can significantly increase the sensor full depletion voltage, causing either breakdown if operated at high biases or charge collection loss if operated at lower biases than full depletion. For LHC Upgrade, or the SLHC, however, whit an increased total fluence up to 1x10 16 n eq /cm 2 , the main limiting factor for Si detector operation is the severe trapping of free carriers by radiation-induced defect levels. Several new approaches have been developed to make Si detector more radiation hard/tolerant to such ultra-high radiation, including 3D Si detectors, Current-Injected-Diodes (CID) detectors, and Elevated temperature annealing.

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Section: Space Charge Transformation Due To Free Carrier Trapping (Spmentioning

confidence: 99%

“…Readers who are interested in more details of the Lazarus effect and radiation hard cryogenic Si detectors are referred to ref. [27][28][29][30].…”

Section: Space Charge Transformation Due To Free Carrier Trapping (Sp...mentioning

confidence: 99%

Radiation damage effects in Si materials and detectors and rad-hard Si detectors for SLHC

Li¹

2009

J. Inst.

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“…Investigation of irradiated Si detectors while cooling from RT down to 130 K. The results showed a striking recovery of the charge collection efficiency, CCE = Q c /Q o (where Q c is the collected charge and Q o the charge generated in the detector by impinging particles). This effect, known as the Lazarus effect, also led to the recovery of position resolution in Si microstrip detectors [4]- [6].…”

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confidence: 95%

Development of silicon detectors for Beam Loss Monitoring at HL-LHC

et al. 2017

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Silicon detectors were proposed as novel Beam Loss Monitors (BLM) for the control of the radiation environment in the vicinity of the superconductive magnets of the High-Luminosity Large Hadron Collider. The present work is aimed at enhancing the BLM sensitivity and therefore the capability of triggering the beam abort system before a critical radiation load hits the superconductive coils. We report here the results of three in situ irradiation tests of Si detectors carried out at the CERN PS at 1.9–4.2 K. The main experimental result is that all silicon detectors survived irradiation up to 1.22× 1016 p/cm2. The third test, focused on the detailed characterization of the detectors with standard (300 μm) and reduced (100 μm) thicknesses, showed only a marginal difference in the sensitivity of thinned detectors in the entire fluence range and a smaller rate of signal degradation that promotes their use as BLMs. The irradiation campaigns produced new information on radiation damage and carrier transport in Si detectors irradiated at the temperatures of 1.9–4.2 K. The results were encouraging and permitted to initiate the production of the first BLM prototype modules which were installed at the end of the vessel containing the superconductive coil of a LHC magnet immersed in superfluid helium to be able to test the silicon detectors in real operational conditions.

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“…For this reason, intensive research and development (R&D) efforts have been devoted to improving the radiation resistance of silicon sensors. In this framework, the R&D 39 collaboration has shown that heavily damaged detectors can be fully recovered by operating them at cryogenic temperatures (Lazarus effect) [1].…”

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confidence: 99%

Modeling of an integrated active feedback preamplifier in a 0.25 /spl mu/m CMOS technology at cryogenic temperatures

Saramad

Anelli

Bucher

et al. 2003

IEEE Trans. Nucl. Sci.

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Abstract-This paper describes the modeling of a standard 0.25 m CMOS technology at cryogenic temperatures. In the first step of the work, the parameters of the EKV v2.6 model were extracted at different temperatures (300, 150, and 70 K). The extracted parameters were then used to optimize the performance of a room temperature designed active feedback front-end preamplifier (AFP) at 130 K. The results show that with a small adjustment of the extracted parameters it is possible to have a reasonable model at low temperatures. By optimizing the bias conditions at 130 K, a fall time down to 1.5 ns and a double pulse resolution of 6.5 ns were measured for NA60 proton beamscope. The proposed approach will also allow a low temperature design optimization for future projects, which will not be possible using only standard models provided by the foundry.

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Review on the development of cryogenic silicon detectors

Cited by 13 publications

References 3 publications

Radiation damage effects in Si materials and detectors and rad-hard Si detectors for SLHC

Radiation damage effects in Si materials and detectors and rad-hard Si detectors for SLHC

Development of silicon detectors for Beam Loss Monitoring at HL-LHC

Modeling of an integrated active feedback preamplifier in a 0.25 /spl mu/m CMOS technology at cryogenic temperatures

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