Review—Opportunities in Single Event Effects in Radiation-Exposed SiC and GaN Power Electronics

Abstract

Radiation effects have a critical impact on the reliability of SiC and GaN power electronics and must be understood for space and avionics applications involving exposure to various types of ionizing and non-ionizing radiation. While these semiconductors have shown excellent radiation hardness to total ionizing dose and displacement damage effects, SiC and GaN power devices are susceptible to degradation from single event effects (SEE) resulting from the high-energy, heavy-ion space radiation environment (galactic cosmic rays) that cannot be shielded. This degradation occurs at <50% of the rated operating voltage, requiring operation of SiC MOSFETs and rectifiers at de-rated voltages. SEE caused by terrestrial cosmic radiation (neutrons) have also been identified by industry as a limiting factor for the use of SiC-based electronics in aircraft. In this paper we review prospects and opportunities for a comprehensive and systematic assessment of these materials to understand the origin and possible mitigation of these effects.

Radiation Damage in the Ultra-Wide Bandgap Semiconductor Ga2O3

“…Total dose damage.-Since Ga 2 O 3 devices and more generally all wide bandgap semiconductor devices normally use metal gates, Total Ionizing Dose (TID) effects are not as important as they are in Si technology, 40,[66][67][68][69][70] which is based on MOS-gate devices. The relations between charge (e) and electric field, E (Poisson's equation) and the transport (drift/diffusion) equations depend on carrier mobility (μ e,p ) and density (n,p), i.e.,…”

“…While significant work has been done for radiation effects in GaN [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16]59 and SiC, [43][44][45][46][47][48][49][50][51][52][53][54][55][56][57][58][60][61][62][63][64][65] the understanding of carrier removal rates, defect levels and annealing regimes for Ga 2 O 3 is on-going. [66][67][68][69][70][71][72] Spacecraft operating beyond Earth's magnetosphere are subject to space weather including the solar wind, a flux of radiation and charged particles that can degrade electronics. 73 These charged particles from the solar wind are also trapped inside the Earth's magnetosphere, forming the Van Allen radiation belts, which further expose transiting spacecraft to c...…”

(Invited) Radiation Damage in the Ultra Wide Bandgap Semiconductor Ga2O3

“…Total Dose Damage Since Ga2O3 devices and more generally all wide bandgap semiconductor devices normally use metal gates, Total Ionizing Dose (TID) effects are not as important as they are in Si technology (42,(68)(69)(70)(71)(72) , which is based on MOS-gate devices. The relations between charge (e) and electric field, E (Poisson's equation) and the transport (drift/diffusion) equations depend on carrier mobility (µe,p ) and density (n,p), i.e., 𝐽𝐽 𝑛𝑛 = 𝑒𝑒µ 𝑛𝑛 𝑛𝑛𝑛𝑛 − 𝑛𝑛𝐷𝐷 𝑛𝑛 𝛻𝛻𝑛𝑛 𝐽𝐽 𝑝𝑝 = 𝑒𝑒µ 𝑝𝑝 𝑝𝑝𝑛𝑛 − 𝑛𝑛𝐷𝐷 𝑝𝑝 𝛻𝛻𝑝𝑝…”

“…Radiation tolerance is an important factor while fabricating microelectronics and typical radiation damage suffered includes total dose effects, displacement damage, and single event effects . While significant work has been done for radiation effects in GaN (1)(2)(3)(4)(5)(6)(7)(8)(9)(10)(11)(12)(13)(14)(15)(16)61) and SiC (45)(46)(47)(48)(49)(50)(51)(52)(53)(54)(55)(56)(57)(58)(59)(60)(62)(63)(64)(65)(66)(67) , the understanding of carrier removal rates, defect levels and annealing regimes for Ga2O3 is on-going (68)(69)(70)(71)(72)(73)(74) .…”

Investigation of the Efficiency of Shielding Gamma and Electron Radiation Using Glasses Based on TeO2-WO3-Bi2O3-MoO3-SiO to Protect Electronic Circuits from the Negative Effects of Ionizing Radiation

“…One of the leading and most important areas of research in the field of microelectronics is the study of the resistance of microelectronic devices and semiconductor devices to radiation, as well as the assessment of their degradation under operating conditions when exposed to ionizing radiation and increased background radiation [ 1 , 2 ]. This area of research has been of high relevance in recent years due to the increase in the number of manufactured devices and their areas of application, with the transition of most industries to robotization, as well as the complications and reduction in the geometric dimensions of microcircuits and semiconductor devices, which requires the abandonment of most traditional methods of protection against the negative effects of ionizing radiation [ 3 , 4 , 5 ]. This problem is especially acute in space technology and nuclear power engineering and when operating instruments under conditions of exposure to radiation, particularly with high-energy electrons, gamma radiation, protons or heavy ions [ 6 ].…”