Review—Silicon Nitride and Silicon Nitride-Rich Thin Film Technologies: Trends in Deposition Techniques and Related Applications

Kaloyeros, Alain E.; Jové, Fernando; Goff, Jonathan; Arkles, Barry

doi:10.1149/2.0011710jss

Cited by 133 publications

(79 citation statements)

References 141 publications

(322 reference statements)

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“…In recent years, atomic layer deposition (ALD) has received great attention due to its unique features, such as the ability to prepare highly conformal thin films on high-aspect ratio substrates and to control the film thickness on an atomic level [ 13 , 14 ]. The self-limiting surface reaction in ALD leads to a continuous pinhole-free film, which can be used to deposit different metals, metal oxides and nitrides at relatively low temperatures [ 15 , 16 , 17 ]. Due to the high density of ALD thin films, single-layer and multi-layer stacks of TiO 2 by thermal- and plasma-assisted ALD have been used for packaging and moisture-proof purposes [ 18 , 19 ].…”

Section: Introductionmentioning

confidence: 99%

Effect of Annealing Temperature on Spatial Atomic Layer Deposited Titanium Oxide and Its Application in Perovskite Solar Cells

et al. 2020

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In this study, spatial atomic layer deposition (sALD) is employed to prepare titanium dioxide (TiO2) thin films by using titanium tetraisopropoxide and water as metal and water precursors, respectively. The post-annealing temperature is varied to investigate its effect on the properties of the TiO2 films. The experimental results show that the sALD TiO2 has a similar deposition rate per cycle to other ALD processes using oxygen plasma or ozone oxidant, implying that the growth is limited by titanium tetraisopropoxide steric hindrance. The structure of the as-deposited sALD TiO2 films is amorphous and changes to polycrystalline anatase at the annealing temperature of 450 °C. All the sALD TiO2 films have a low absorption coefficient at the level of 10−3 cm−1 at wavelengths greater than 500 nm. The annealing temperatures of 550 °C are expected to have a high compactness, evaluated by the refractive index and x-ray photoelectron spectrometer measurements. Finally, the 550 °C-annealed sALD TiO2 film with a thickness of ~8 nm is applied to perovskite solar cells as a compact electron transport layer. The significantly enhanced open-circuit voltage and conversion efficiency demonstrate the great potential of the sALD TiO2 compact layer in perovskite solar cell applications.

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Section: Introductionmentioning

confidence: 99%

Effect of Annealing Temperature on Spatial Atomic Layer Deposited Titanium Oxide and Its Application in Perovskite Solar Cells

et al. 2020

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“…Relative permittivity ε r Thermal conductivity κ [W m −1 K −1 ] Water 1.777 [17] 0.6 [17] Gold ref. [43] 317.0 [12] Glass 2.310 [44] 4.0 [44] Si 3 N 4 4.064 [45] 30.0 [46] Figure 1. Schematic of the simulated free-standing nanocone.…”

Section: Methodsmentioning

confidence: 99%

Photoinduced Temperature Gradients in Sub‐Wavelength Plasmonic Structures: The Thermoplasmonics of Nanocones

Cunha

Guo

Koya

et al. 2020

Advanced Optical Materials

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Plasmonic structures are renowned for their capability to efficiently convert light into heat at the nanoscale. However, despite the possibility to generate deep sub‐wavelength electromagnetic hot spots, the formation of extremely localized thermal hot spots is an open challenge of research, simply because of the diffusive spread of heat along the whole metallic nanostructure. Here this challenge is tackled by exploiting single gold nanocones. It is theoretically shown how these structures can indeed realize extremely high temperature gradients within the metal, leading to deep sub‐wavelength thermal hot spots, owing to their capability of concentrating light at the apex under resonant conditions even under continuous wave illumination. A 3D finite element method model is employed to study the electromagnetic field in the structure and subsequent thermoplasmonic behavior, in terms of the 3D temperature distribution. How the latter is affected by nanocone size, shape, and composition of the surrounding environment is shown. Finally, the use of photoinduced temperature gradients in nanocones is anticipated for applications in optofluidics and thermoelectrics or for thermally induced nanofabrication.

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“…In addition, silicon nitride nonvolatile memories (NVM) have been well-established and various charge-trapping memory devices are commercial nowadays (e.g., BiCS, SONOS). Their acceptance by the community is mainly attributed to the intrinsic bulk defects that act as trapping levels for both electrons and holes [13][14][15]. The resistive switching and conduction mechanism in SiN memristors is directly related to these intrinsic defects, as has been shown by several research groups [16][17][18].…”

Section: Introductionmentioning

confidence: 99%

In-Memory-Computing Realization with a Photodiode/Memristor Based Vision Sensor

2021

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State-of-the-art IoT technologies request novel design solutions in edge computing, resulting in even more portable and energy-efficient hardware for in-the-field processing tasks. Vision sensors, processors, and hardware accelerators are among the most demanding IoT applications. Resistance switching (RS) two-terminal devices are suitable for resistive RAMs (RRAM), a promising technology to realize storage class memories. Furthermore, due to their memristive nature, RRAMs are appropriate candidates for in-memory computing architectures. Recently, we demonstrated a CMOS compatible silicon nitride (SiNx) MIS RS device with memristive properties. In this paper, a report on a new photodiode-based vision sensor architecture with in-memory computing capability, relying on memristive device, is disclosed. In this context, the resistance switching dynamics of our memristive device were measured and a data-fitted behavioral model was extracted. SPICE simulations were made highlighting the in-memory computing capabilities of the proposed photodiode-one memristor pixel vision sensor. Finally, an integration and manufacturing perspective was discussed.

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Review—Silicon Nitride and Silicon Nitride-Rich Thin Film Technologies: Trends in Deposition Techniques and Related Applications

Cited by 133 publications

References 141 publications

Effect of Annealing Temperature on Spatial Atomic Layer Deposited Titanium Oxide and Its Application in Perovskite Solar Cells

Effect of Annealing Temperature on Spatial Atomic Layer Deposited Titanium Oxide and Its Application in Perovskite Solar Cells

Photoinduced Temperature Gradients in Sub‐Wavelength Plasmonic Structures: The Thermoplasmonics of Nanocones

In-Memory-Computing Realization with a Photodiode/Memristor Based Vision Sensor

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