2016
DOI: 10.1149/2.0041606jss
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Review—Understanding and Controlling Electrochemical Effects in Wet Processing

Abstract: Electrochemical techniques have long been used in understanding and improving the performance of various wet chemical processing steps such as etching, cleaning, passivation and rinsing used in integrated circuit (IC) manufacturing. The objective of this paper is to provide a few examples of how electrochemical techniques can be used to probe some important areas in wet processing. It is not intended to be an exhaustive review of techniques and problems reported in the literature.

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Cited by 2 publications
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“…These poor device performances against liquid-gate voltage sweeping suggest significant charged trap states at the graphene/ electrolyte interface, an indicator of the presence of a large amount of surface contaminants (even though all the devices were baked at ~200°C and thoroughly rinsed in isopropanol; see Materials and Methods) (20). To restore highly reliable device characteristics before measurement, the graphene transistor is subjected to an in situ electrochemical cleaning that rapidly removes any surface contaminants from graphene (see Materials and Methods) (21)(22)(23)(24). This electrochemical cleaning technique yields consecutively recovered transfer curves of the GFET-I as shown in Fig.…”
Section: Resultsmentioning
confidence: 99%
“…These poor device performances against liquid-gate voltage sweeping suggest significant charged trap states at the graphene/ electrolyte interface, an indicator of the presence of a large amount of surface contaminants (even though all the devices were baked at ~200°C and thoroughly rinsed in isopropanol; see Materials and Methods) (20). To restore highly reliable device characteristics before measurement, the graphene transistor is subjected to an in situ electrochemical cleaning that rapidly removes any surface contaminants from graphene (see Materials and Methods) (21)(22)(23)(24). This electrochemical cleaning technique yields consecutively recovered transfer curves of the GFET-I as shown in Fig.…”
Section: Resultsmentioning
confidence: 99%