Reviews on Electrochemistry of Semiconductors

Myamlin, Viktor A.; Pleskov, Yu. V.

doi:10.1007/978-1-4899-6533-2_7

Cited by 3 publications

(6 citation statements)

References 5 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…21 The excess of charge was compensated inside the interface which could involve a modification of the semiconductor (SC) interface. The equivalent capacitance of the interface could be described according to the relation (1) where Csc was the only bias-dependent capacitance. 22 1/C = 1/C H + 1/Csc [1] A contact between n-InP and water acted as an electrochemical junction.…”

Section: Resultsmentioning

confidence: 99%

“…The fundamental properties of many semiconductor/electrolyte systems were monitored by the flatband potential position (E FB ). 1,2 Its position governed the interfacial characteristics and controlled the electrochemical properties. A classical way of measuring the variation of the flatband potential position was to change the pH of the medium.…”

mentioning

confidence: 99%

“…9,[13][14][15][16]18 This was particularly true in terms of surface electrical field, charge, capacitance, layer of the space charge region. 1,2,19 As a consequence, undoped n-InP exhibited a wider range of interfacial polarization avoiding faradaic transfer at the interface SC/electrolyte. These improved conditions were required for interfacial capacitance measurements compared to high doped SC.…”

mentioning

confidence: 99%

See 2 more Smart Citations

Photopotential Measurements on Undopedn-InP at Open Circuit Potential According to the Aqueous pH

Meldeje¹,

Gonçalves²,

Simon³

et al. 2018

J. Electrochem. Soc.

View full text Add to dashboard Cite

In this work we studied some fundamental concepts of n-InP interfacial properties based on acid-base equilibrium in the dark and also after the surface illumination at open circuit voltage (Voc). The variation of the flatband potential on undoped n-InP semiconductor was investigated according to aqueous pH. This study was complemented by the effect of the illumination at Voc conditions through photopotential measurements. The impact of the surface lighting on acid-base equilibrium was analyzed by in-situ interfacial capacitance measurements in the dark and by ex-situ X-ray photoelectron spectrometry. The fundamental properties of many semiconductor/electrolyte systems were monitored by the flatband potential position (E FB ). 1,2Its position governed the interfacial characteristics and controlled the electrochemical properties. A classical way of measuring the variation of the flatband potential position was to change the pH of the medium. Many semiconductors were actually sensitive to the variation of acid-base equilibrium.3-12 For III-V semiconductors such as binary (GaAs 3,5 or GaP 6,7 ) or ternary 8 compounds, the acid-base equilibrium was complicated by the specific adsorption sites which induced localized charges on the surface. 13 Previous works have shown a quasi Nernstian variation of the flatband potential on n-InP for (100) 14 and (111) faces 13 over the whole pH range in aqueous medium and also in non aqueous medium such as acetonitrile 15 and liquid ammonia. 16Acid-base equilibrium was studied in the dark from interfacial capacitance measurements in the depletion region avoiding faradaic transfer at the interface semiconductor/electrolyte. This included changing the voltage of the semiconductor artificially through the use of a potentiostat. The band bending owing to electron depletion in the semiconductor (SC) changed depending on the voltage. In the depletion region the Boltzmann relation described the distribution of electrons in the space charge region and the electric field was determined by Gauss'law. Poisson's equation could be solved within that region to give the Mott-Schottky equation that links the reverse square of the capacitance (C) to the interfacial polarization (E). 17 Under depletion conditions the flatband potential was actually deduced from C −2 = f(E) straight line which extrapolation gave E FB for a zero value of C −2 . There are other ways to evaluate the flatband potential such as measuring the photopotential at the open circuit voltage (Voc). As a function of radiation intensity the photopotential was the change in the Fermi level due to the promotion of electrons to the conduction band, and it reached theoretically a maximum at the flatband potential. 13,18 In this paper acid-base equilibrium were further discussed on undoped nInP in which the low doping level led to a space charge region strongly different as compared to high doped n-InP. 9,[13][14][15][16]18 This was particularly true in terms of surface electrical field, charge, capacitance, layer of the space charge re...

show abstract

Section: Resultsmentioning

confidence: 99%

mentioning

confidence: 99%

mentioning

confidence: 99%

See 1 more Smart Citation

Photopotential Measurements on Undopedn-InP at Open Circuit Potential According to the Aqueous pH

Meldeje¹,

Gonçalves²,

Simon³

et al. 2018

J. Electrochem. Soc.

View full text Add to dashboard Cite

show abstract

“…EDLs impede charge transport towards the sample surface. 5,6,10,25,26 The addition of MSP increases the effective conductivity of the etchant and, thus, modifies the EDL (cf Fig. 7).…”

Section: Discussionmentioning

confidence: 99%

Electrolytic Etching of Germanium Substrates with Hydrogen Peroxide

Wood,

van Buuren,

Guo

et al. 2023

J. Electrochem. Soc.

View full text Add to dashboard Cite

Anodic electrolytic etching of germanium has been performed in hydrogen peroxide etchants with controlled external conditions. In-situ current and ex-situ etch-depths were measured and tracked with respect to etchant composition and stir rates. Gas bubbles formed during the etching process were found to cause non-uniformity in etch-current and surface quality. The effects were minimized in specific composition spaces. Quantitative analysis revealed a linear correlation of the number of electrons transferred during germanium oxidation with the number of surface atoms removed. Experimental results of 2.77 electrons/atom deviate significantly from 4 electrons/atom previously reported for silicon. The conclusion is that etching mechanisms for germanium are sufficiently different from those for silicon which invalidates the direct transfer of processing techniques between the two materials.

show abstract

“…It is known that under the room temperature water contains ions ОНand Н + in concentrations 1.2•10 14 cm −3 , Н + ions being in complexes Н 5 О 2 + [6]. After dipping the electrode into water, there arises electron-ion exchange between them, which causes a potential hop (the so-called Galvani-potential [7]). The latter comprises at least the following components: a potential drop in a diffusion (for ions) water layer near the electrode; potential drop in the thin (~10 −8 cm) Helmholtz layer created by ions close to electrode surface; potential drop in the very electrode (it is essential for electrodes made of semiconductors that have a subsurface space charge layer [8]).…”

Section: Resultsmentioning

confidence: 99%

Effect of oxidation of catalytically active silicon-based electrodes on water decomposition

Primachenko¹

2007

Semicond. phys. quantum electron. optoelectron.

View full text Add to dashboard Cite

In this work, we continue to study the revealed phenomenon of current creation in the electrochemical system with distilled water during its decomposition without any applied external voltage. Investigated are catalytically active (to decompose water) electrodes based on silicon with modified surface (due to lapping, texturing, doping with palladium, creation of silicides) before and after thermooxidizing for 1 hour in dry oxygen at 850 ºC. Also performed are investigations of time dependences for the current between silicon electrodes and counter-electrodes made of Al, Pt, Yb when using the circuit with the external voltage V 0 = ± 9.7 V. Analyzed are the results obtained and prospects for a further study.

show abstract

Reviews on Electrochemistry of Semiconductors

Cited by 3 publications

References 5 publications

Photopotential Measurements on Undopedn-InP at Open Circuit Potential According to the Aqueous pH

Photopotential Measurements on Undopedn-InP at Open Circuit Potential According to the Aqueous pH

Electrolytic Etching of Germanium Substrates with Hydrogen Peroxide

Effect of oxidation of catalytically active silicon-based electrodes on water decomposition

Contact Info

Product

Resources

About