Revised theory of current transport through the Schottky structure

Racko, J.; Donoval, D.; Barus, M.; Nágl, V.; Grmanová, Alena

doi:10.1016/0038-1101(92)90318-7

Cited by 17 publications

(13 citation statements)

References 11 publications

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“…Numerical solutions of a Schottky contact typically utilize the concept of “effective recombination velocity”, first introduced by Crowell and Sze in the wake of semiconductor device modeling development. , By using separate recombination velocities for electrons and holes, the electron ( J n ) and hole ( J p ) currents at the contact can be expressed as ,, where v s,n and v s,p are the electron and hole surface recombination velocities (see Figure a). Moreover, n s0 and p s0 are the equilibrium concentrations of electrons and holes at the interface, and n s and p s are the nonequilibrium concentrations of electrons and holes at the interface, respectively.…”

Section: Introductionmentioning

confidence: 99%

“…17 Numerical solutions of a Schottky contact typically utilize the concept of "effective recombination velocity", first introduced by Crowell and Sze in the wake of semiconductor device modeling development. 43,44 By using separate recombination velocities for electrons and holes, the electron (J n ) and hole (J p ) currents at the contact can be expressed as 38,45,46…”

Section: Introductionmentioning

confidence: 99%

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Simultaneously Solving the Photovoltage and Photocurrent at Semiconductor–Liquid Interfaces

Iqbal

Bevan

2017

J. Phys. Chem. C

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In this work, we present a general theoretical and numerical approach for simultaneously solving the photovoltage and photocurrent at semiconductor−liquid interfaces. Our methodology extends drift-diffusion methods developed for metal−semiconductor Schottky contacts in the device physics community into the domain of semiconductor− liquid "pseudo-Schottky" contacts. This model is applied to the study of photoelectrochemical anodes, utilized in the oxidative splitting of water. To capture both the photovoltage and photocurrent at semiconductor−liquid interfaces, we show that it is necessary to solve both the electron and hole current continuity equations simultaneously. The electron continuity equation is needed to primarily capture the photovoltage formation at photoanodes, whereas the hole continuity equation must be solved to obtain the photocurrent. Both continuity equations are solved through coupled recombination and generation terms. Moreover, to capture charge transfer at the semiconductor−liquid interface, floating (Neumann) boundary conditions are applied to the electron and hole continuity equations. As a model system, we have studied the illuminated hematite photoanode, where it is shown that our approach can capture band flattening during the formation of a photovoltage, as well as the photocurrent onset and saturation. Finally, the utility of this methodology is demonstrated by correlating our theoretical calculations with photocurrent measurements reported in the literature. In general, this work is intended to expand the scope of photocatalytic device design tools and thereby aid the optimization of solar fuel generation.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Simultaneously Solving the Photovoltage and Photocurrent at Semiconductor–Liquid Interfaces

Iqbal

Bevan

2017

J. Phys. Chem. C

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“…These morphological and structural inhomogeneities incorporate a low and high barrier along with the MS interface. At low temperature the current through the lower barriers lies in the applied potential distribution [60,69,70]. Authors in [64] showed that the Richardson constant calculated from the J-V-T characteristics depends strictly on the barrier inhomogeneities.…”

Section: A Forward-bias J-v-t Characteristics Of a /P-cis/sno 2 :Fmentioning

confidence: 99%

Temperature Effect on Al/p-CuInS2/SnO2(F) Schottky Diodes

Nasrallah

Mahboub

Jemai³

et al. 2019

Eng. Technol. Appl. Sci. Res.

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In this paper, Schottky diodes (SDs) obtained by evaporated thin films of aluminum on pulverized p-CuInS2/SnO2:F have been studied using J-V-T characteristics in a temperature range of 200-340K. These characteristics show that aluminum acts as a rectifier metal-semiconductor contact. Characteristic variables of the Al/p-CuInS2/SnO2:F junctions, such as the current density, the serial resistance, the parallel conductance, the Schottky barrier height (SBH), and the ideality factor of the SD were obtained by fitting the J-V-T data using the Lambert function. Data analysis was conducted with the use of MATLAB. Results showed that n is greater than 1, which could be explained by the existence of inhomogeneities due to the grain boundaries in CuInS2. Through this analysis, one can see a good agreement between experimental and modeled data. The study has shown that the main contribution in the current conduction in such heterostructures is the thermionic emission (TE) supported by the recombination of the carriers. The last phenomenon appears mainly in the grain boundaries, which contain both intrinsic and extrinsic defects (secondary phases, segregated oxygen). An investigation of the J-V-T characteristics according to TE theory has demonstrated that the current density and the SBH increase while serial resistance, parallel conductance decrease with an increase in temperature. After an SBH inhomogeneity correction, the modified Richardson constant and the mean barrier height were found to be 120AK-2cm-2 and 1.29eV respectively. This kind of behavior has been observed in many metal-semiconductor contacts.

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“…Our approach is based on the revised theory of current transport through the Schottky structure [6]. In this theory the influence of the generation-recombination mechanism is added to the drift-diffusion current through the semiconductor and when this is neglected by setting U ( x ) = 0 we will get the relations derived previously by Crowell and Sze [7].…”

Section: Our Approachmentioning

confidence: 99%

“…Modifying the equation for total current density from [6] by introducing the boundary conditions (7) and (13) to (16) gives the total current flowing through a metal-semi-conductor-metal structure [8] fr n0 -exp (5)…”

Section: Our Approachmentioning

confidence: 99%

Numerical simulation of a metal–semiconductor–metal structure with Schottky contacts at both ends

Hromcova

Donoval

Racko

1994

Phys. Stat. Sol. (a)

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New boundary conditions for the simulation of MSM structures with Schottky contacts at both ends are evaluated. They are based on the new integral equation for current density through an MSM structure where the quasi‐neutral approximation at the reference contact is avoided. While the reverse I–V characteristics are not affected, much better agreement between simulated and experimental characteristics is achieved in a wider range of forward applied voltages.

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Revised theory of current transport through the Schottky structure

Cited by 17 publications

References 11 publications

Simultaneously Solving the Photovoltage and Photocurrent at Semiconductor–Liquid Interfaces

Simultaneously Solving the Photovoltage and Photocurrent at Semiconductor–Liquid Interfaces

Temperature Effect on Al/p-CuInS2/SnO2(F) Schottky Diodes

Numerical simulation of a metal–semiconductor–metal structure with Schottky contacts at both ends

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