Revisited study of fluorine implantation impact on negative bias temperature instability for input/output device of automotive micro controller unit

Abstract

We investigate the effect of fluorine implanted in the polycrystalline silicon (poly-Si) gate and source/drain (S/D) region on negative bias temperature instability (NBTI) improvement. It is found that there is a trade-off implantation energy dependence of NBTI between fluorine in the poly-Si gate and that in the S/D region. Fluorine implanted in the poly-Si gate contributes to NBTI improvement under low energy implantation. On the other hand, NBTI is improved by fluorine implanted in the S/D region under high energy. We propose that the two-step implantation process with high and low energy is the optimum condition for NBTI improvement.