Metal
oxide semiconductor/chalcogenide quantum dot (QD) heterostructured
photoanodes show photocurrent densities >30 mA/cm
2
with
ZnO, approaching the theoretical limits in photovoltaic (PV) cells.
However, comparative performance has not been achieved with TiO
2
. Here, we applied a TiO
2
(B) surface passivation
layer (SPL) on TiO
2
/QD (PbS and CdS) and achieved a photocurrent
density of 34.59 mA/cm
2
under AM 1.5G illumination for
PV cells, the highest recorded to date. The SPL improves electron
conductivity by increasing the density of surface states, facilitating
multiple trapping/detrapping transport, and increasing the coordination
number of TiO
2
nanoparticles. This, along with impeded
electron recombination, led to enhanced collection efficiency, which
is a major factor for performance. Furthermore, SPL-treated TiO
2
/QD photoanodes were successfully exploited in photoelectrochemical
water splitting cells, showing an excellent photocurrent density of
14.43 mA/cm
2
at 0.82 V versus the Reversible Hydrogen Electrode
(RHE). These results suggest a new promising strategy for the development
of high-performance photoelectrochemical devices.