RF Bandpass Filters using FBAR with Fractal Electrodes

Bhadauria, Avanish; Panchal, Bhargav; Varghese, Soney

doi:10.1109/imarc.2018.8877300

Cited by 6 publications

(3 citation statements)

References 5 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Figure 7d shows that the in-band ripple is reduced in all filters. As the filter order increases, out-ofband rejection improves but, inevitably, leads to increased insertion loss [38]. The measured transmission responses (S21) of the FBAR filters with different orders are shown in Figure 7.…”

Section: Data Availability Statementmentioning

confidence: 99%

See 1 more Smart Citation

Design and Fabrication of 3.5 GHz Band-Pass Film Bulk Acoustic Resonator Filter

Zhou,

Zheng,

et al. 2024

Micromachines

View full text Add to dashboard Cite

With the development of wireless communication, increasing signal processing presents higher requirements for radio frequency (RF) systems. Piezoelectric acoustic filters, as important elements of an RF front-end, have been widely used in 5G-generation systems. In this work, we propose a Sc0.2Al0.8N-based film bulk acoustic wave resonator (FBAR) for use in the design of radio frequency filters for the 5G mid-band spectrum with a passband from 3.4 to 3.6 GHz. With the excellent piezoelectric properties of Sc0.2Al0.8N, FBAR shows a large Keff2 of 13.1%, which can meet the requirement of passband width. Based on the resonant characteristics of Sc0.2Al0.8N FBAR devices, we demonstrate and fabricate different ladder-type FBAR filters with second, third and fourth orders. The test results show that the out-of-band rejection improves and the insertion loss decreases slightly as the filter order increases, although the frequency of the passband is lower than the predicted ones due to fabrication deviation. The passband from 3.27 to 3.47 GHz is achieved with a 200 MHz bandwidth and insertion loss lower than 2 dB. This work provides a potential approach using ScAlN-based FBAR technology to meet the band-pass filter requirements of 5G mid-band frequencies.

show abstract

Section: Data Availability Statementmentioning

confidence: 99%

“…Figure 7d shows that the in-band ripple is reduced in all filters. As the filter order increases, out-of-band rejection improves but, inevitably, leads to increased insertion loss [38].…”

Section: Data Availability Statementmentioning

confidence: 99%

Design and Fabrication of 3.5 GHz Band-Pass Film Bulk Acoustic Resonator Filter

Zhou,

Zheng,

et al. 2024

Micromachines

View full text Add to dashboard Cite

show abstract

“…The mechanical resonance frequency of a surface acoustic wave (SAW) resonator is determined by the widths of and spacing between the interdigital electrodes (Mamishev et al, 2004;Kimura et al, 2019). When the resonance frequency is higher than that of the 2G communication band, the sizes of the interdigital electrodes are too small to achieve high process accuracy, which in turn increases the ohmic loss of the device (Bhadauria et al, 2018). A thin film bulk acoustic resonator (FBAR) is a device that is realized by the acoustic resonance of a piezoelectric film in the thickness direction; the FBAR can easily achieve gigahertz or even higher frequency owing to its structural advantages.…”

Section: Introductionmentioning

confidence: 99%

Structure-Size Optimization and Fabrication of 3.7 GHz Film Bulk Acoustic Resonator Based on AlN Thin Film

Jiang

Shiping

et al. 2021

Front. Mater.

View full text Add to dashboard Cite

Traditional radio frequency filters cannot meet the demands of miniaturization, high frequency operation, integration, and broadband capacity in new-generation communication system owing to their larger volumes. A thin film bulk acoustic resonator (FBAR) is therefore suggested as an optimum solution because of its small volume and a good performance. In this study, the COMSOL multiphysics software was used to build 2 D and 3 D finite element models to analyze the harmonic characteristics of the FBAR. Based on the optimized structural parameters, the FBAR was fabricated with series resonant frequency, parallel resonant frequency, and effective coupling coefficient values of 3.705, and 3.82 GHz, and 7.4%, respectively. Compared with the simulated FBAR results, the effective coupling coefficient of the fabricated FBAR declined by only 0.1%, almost achieving the desired performance.

show abstract

Analysis of L-section Characteristics for Microwave Filters on BAW Resonators

Dubinin

Козлов

2019

2019 Dynamics of Systems, Mechanisms and Machines (Dynamics)

View full text Add to dashboard Cite

RF Bandpass Filters using FBAR with Fractal Electrodes

Cited by 6 publications

References 5 publications

Design and Fabrication of 3.5 GHz Band-Pass Film Bulk Acoustic Resonator Filter

Design and Fabrication of 3.5 GHz Band-Pass Film Bulk Acoustic Resonator Filter

Structure-Size Optimization and Fabrication of 3.7 GHz Film Bulk Acoustic Resonator Based on AlN Thin Film

Analysis of L-section Characteristics for Microwave Filters on BAW Resonators

Contact Info

Product

Resources

About