RF hydrogen-plasma-induced defects in p-Si/SiO2 structures with submicron thermally grown oxides

Reliability degradation of thin HfO2/SiO2 gate stacks by remote RF hydrogen and deuterium plasma treatment

“…It is well known that hydrogen influences many electrophysical properties of Si/SiO 2 structures [1]. However, as SiO 2 is bound to be replaced at the next stage of scaling by high k dielectrics, most probably by HfO 2 or one of its silicates, it is very important to determine how the incorporation of hydrogen will affect the electrical properties of these novel oxides.…”