2001
DOI: 10.1016/s0042-207x(00)00478-4
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RF hydrogen-plasma-related defects in thin SiO2/p-Si structures

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Cited by 3 publications
(2 citation statements)
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“…Also one might argue that the plasma treatment was responsible for creating electrically active defects in the oxide as was previously reported by Simeonov and co workers [5], and that trapassisted tunneling through these defects was the cause of the degradation. However if degradation was mainly related to plasma damage one would expect that O 2 plasma treatment would induce the largest degree of damage compared to H 2 /D 2 treatment due to the much larger mass of oxygen ions.…”
Section: Contents Lists Available At Sciencedirectmentioning
confidence: 59%
“…Also one might argue that the plasma treatment was responsible for creating electrically active defects in the oxide as was previously reported by Simeonov and co workers [5], and that trapassisted tunneling through these defects was the cause of the degradation. However if degradation was mainly related to plasma damage one would expect that O 2 plasma treatment would induce the largest degree of damage compared to H 2 /D 2 treatment due to the much larger mass of oxygen ions.…”
Section: Contents Lists Available At Sciencedirectmentioning
confidence: 59%
“…Both air and hydrogenation plasmas are applied to alumina particles before the impregnation of a Ni precursor. It is known that RF plasma can remove surface impurities, generate surface defects, and passivate the surface. It is expected that both air and hydrogen plasmas could improve the uniform deposition of a Ni precursor and enhance its interaction with support. The results of activity versus time of uncalcined, air (B), and H 2 (B) 5% Ni/Al 2 O 3 are summarized in Figure .…”
Section: Resultsmentioning
confidence: 99%