RF, linearity and intermodulation distortion analysis with small-signal parameters extraction of tunable bandgap arsenide/antimonide tunneling interfaced JLTFET

Interfacial charge associated reliability improvement in arsenide/antimonide tunneling interfaced-junctionless TFET

“…However, the impact of ITC polarity is negligible in HD-HJLTFET and the HJLTFET suffers from larger variation in C gs with the introduction of different ITC polarity (figure 5(b)). As reported in [10] and [33], an inversion layer is set up from the drain to the source so that at higher gate voltage, C gg is dominated mainly by C gd . Due to the lower electric field and higher gate to drain coupling at D/C junction, C gd and hence C gg show more immunity against ITC polarity in HD-HJLTFET than HJLTFET (figures 5(c)-(d)).…”

“…The peak value of f T is increased (decreased) by 21.9% (22.4%) on the introduction of PIC (NIC) at the S/O interface of HJLTFET. This higher variation in f T is due to the larger impact of ITC polarity on g m of HJLTFET (figure 4(b)), this happens because f T is directly dependent on g m [10]. However, HD-HJLTFET is immune to the impact of ITC polarity on f T due to the immunity of g m and C gg from ITC polarity at the S/O interface of HD-HJLTFET.…”

“…However, a few problems of TFETs like inferior ON current and ambipolar conduction still need to be addressed. Therefore, many engineering techniques have been proposed and investigated in this regard, such as hetero-junction architecture [4][5][6], hetero-dielectric TFET [7], asymmetric doping of source/drain [8], gate-drain overlapping and underlapping [9,10] etc. Moreover, the fabrication of physically doped devices faces significant challenges such as dopant diffusion, threshold voltage variability, high temperature processing, abrupt junction formation, and scaling limitations [11,12].…”