rf-Magnetron sputtered ITO thin films for improved heterojunction solar cell applications

Dao, Vinh Ai; Choi, Hyung-Wook; Heo, Jeongmin; Park, Hyeongsik; Yoon, Kichan; Lee, Youngseok; Kim, Yongkuk; Lakshminarayan, N.; Yi, Junsin

doi:10.1016/j.cap.2010.02.019

Cited by 60 publications

(29 citation statements)

References 14 publications

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“…Nevertheless amorphous silicon is more resistive than crystalline silicon, and to ensure good carrier collection it is mandatory to use transparent conductive oxide layer. The one mainly used is indium tin oxide (ITO) because it shows good transmittance (>80%) over the solar spectrum coupled to good conductivity [6,7]. A 75 nm to 80 nm layer of ITO can also be used as an antireflective coating (ARC).…”

Section: Introductionmentioning

confidence: 99%

Effect of annealing on silicon heterojunction solar cells with textured ZnO:Al as transparent conductive oxide

et al. 2012

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We report on silicon heterojunction solar cells using textured aluminum doped zinc oxide (ZnO:Al) as a transparent conductive oxide (TCO) instead of flat indium tin oxide. Double side silicon heterojunction solar cell were fabricated by radio frequency plasma enhanced chemical vapor deposition on high life time N-type float zone crystalline silicon wafers. On both sides of these cells we have deposited by radio frequency magnetron sputtering ZnO:Al layers of thickness ranging from 800 nm to 1400 nm. These TCO layers were then textured by dipping the samples in a 0.5% hydrochloric acid. External quantum efficiency as well as I-V under 1 sun illumination measurements showed an increase of the current for the cells using textured ZnO:Al. The cells were then annealed at 150• C, 175• C and 200• C during 30 min in ambient atmosphere and characterized at each annealing step. The results show that annealing has no impact on the open circuit voltage of the devices but that up to a 175• C it enhances their short circuit current, consistent with an overall enhancement of their spectral response. Our results suggest that ZnO:Al is a promising material to increase the short circuit current (Jsc) while avoiding texturing the c-Si substrate.

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Section: Introductionmentioning

confidence: 99%

Effect of annealing on silicon heterojunction solar cells with textured ZnO:Al as transparent conductive oxide

et al. 2012

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“…1 For several decades, TCOs have been used in an array of applications including: flat panel displays, liquid crystal displays, plasma display panel, organic light emitting diodes, thin film transistors, solar photovoltaic (PV) cells and other optoelectronic devices. 1,2 TCOs are playing an important role in the enhancement of the hetero junction silicon solar cell energy conversion efficiencies. 3 In this particular application, the optimal characteristics are found when minimizing sheet resistance and maximizing optical transmittance.…”

Section: Introductionmentioning

confidence: 99%

“…7 The electrical, optical, infrared reflectance, hardness and chemical stability material properties of ITO are well characterized. [8][9][10] ITO can be fabricated by DC and RF magnetron sputtering, 1,5 electron beam evaporation, 9 thermal evaporation, 11 spray pyrolysis, 12 chemical solution deposition, 13 and the sol gel method. 14 Among the various methods, magnetron sputtering is most often used by industry to fabricate commercial optoelectronic devices.…”

Section: Introductionmentioning

confidence: 99%

Effect of ambient combinations of argon, oxygen, and hydrogen on the properties of DC magnetron sputtered indium tin oxide films

et al. 2015

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Sputtering has been well-developed industrially with singular ambient gases including neutral argon (Ar), oxygen (O2), hydrogen (H2) and nitrogen (N2) to enhance the electrical and optical performances of indium tin oxide (ITO) films. Recent preliminary investigation into the use of combined ambient gases such as an Ar+O2+H2 ambient mixture, which was suitable for producing high-quality (low sheet resistance and high optical transmittance) of ITO films. To build on this promising preliminary work and develop deeper insight into the effect of ambient atmospheres on ITO film growth, this study provides a more detailed investigation of the effects of ambient combinations of Ar, O2, H2 on sputtered ITO films. Thin films of ITO were deposited on glass substrates by DC magnetron sputtering using three different ambient combinations: Ar, Ar+O2 and Ar+O2+H2. The structural, electrical and optical properties of the three ambient sputtered ITO films were systematically characterized by X-ray diffraction (XRD), atomic force microscopy (AFM), scanning electron microscopy (SEM), Raman spectroscopy, four probe electrical conductivity and optical spectroscopy. The XRD and Raman studies confirmed the cubic indium oxide structure, which is polycrystalline at room temperature for all the samples. AFM shows the minimum surface roughness of 2.7 nm for Ar+O2+H2 sputtered thin film material. The thickness of the films was determined by the cross sectional SEM analysis and its thickness was varied from 920 to 817 nm. The columnar growth of ITO films was also discussed here. The electrical and optical measurements of Ar+O2+H2 ambient combinations shows a decreased sheet resistance (5.06 ohm/□) and increased optical transmittance (69%) than other samples. The refractive index and packing density of the films were projected using optical transmission spectrum. From the observed results the Ar+O2+H2 ambient is a good choice to enhance the total optoelectronic properties of the ITO films. The improved electrical and optical properties of ITO films with respect to the Ar+O2+H2 ambient sample were discussed in detail. In addition, the physical properties were also discussed with the influence of this ambient combination with respect to Ar, Ar+O2 and Ar+O2+H2.

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“…Bare Eagle glass showed 92% transmittance in the visible wavelength (400~800) nm region. All the ITO films showed more than 85% transmittance in the vis-NIR (400~1,100) nm wavelength region [1][2][3][4][5]20] …”

Section: Resultsmentioning

confidence: 99%

“…ITO (indium tin oxide) films are widely used as front TCO (transparent conductive oxide) in LCDs (liquid-crystal displays), OLEDs (organic light emitting devices), and solar cells due to their low resistivity, high transmittance in the visible wavelength region, and wide optical band gap [1][2][3][4]. The wide application of ITO films have resulted in an extensive study, both on their preparation and characterization.…”

Section: Introductionmentioning

confidence: 99%

Study on the Structural and Mechanical Characteristics of ITO Films Deposited by Pulsed DC Magnetron Sputtering

Kang¹,

Le²,

Park³

et al. 2016

Transactions on Electrical and Electronic Materials

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The mechanical properties of ITO films such as adhesion and internal stress are very important for the commercial application of solar cell devices. We report high quality pulsed DC magnetron sputtered ITO films deposited on silicon and glass substrates with low resistivity and high transmittance for various working pressures ranging from 0.96 to 3.0 mTorr. ITO films showed the lowest resistivity of 2.68×10 -4 Ω·cm, high hall mobility of 46.89 cm 2 /V.s, and high transmittance (>85%) for the ITO films deposited at a low working pressure of 0.99 mTorr. The ITO films deposited at a low working (0.96 mTorr) pressure had both amorphous and polycrystalline structures and were found to have compressive stress while the ITO films deposited at higher temperature than 0.99 mTorr was mixture of amorphous and polycrystalline and was found to have tensile stress.

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rf-Magnetron sputtered ITO thin films for improved heterojunction solar cell applications

Cited by 60 publications

References 14 publications

Effect of annealing on silicon heterojunction solar cells with textured ZnO:Al as transparent conductive oxide

Effect of annealing on silicon heterojunction solar cells with textured ZnO:Al as transparent conductive oxide

Effect of ambient combinations of argon, oxygen, and hydrogen on the properties of DC magnetron sputtered indium tin oxide films

Study on the Structural and Mechanical Characteristics of ITO Films Deposited by Pulsed DC Magnetron Sputtering

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