RF-MBE growth and orientation control of GaN on epitaxial graphene

Subnanometer-thick 2D GaN film with a large bandgap synthesized by plasma enhanced chemical vapor deposition

“…14 So far, epitaxial methods such as molecular beam epitaxy (MBE) and metal-organic chemical vapor deposition (MOCVD), which are costly and inconvenient, have been applied to fabricate thick GaN lm or thin quantum well sandwiched between aluminum nitride (AlN) layers. [22][23][24][25] Recently, 2D GaN encapsulated between SiC and graphene through MOCVD has been synthesized to demonstrate a wide bandgap of 5.0 eV. 12 However, the costly growth process, nanometer-scale sample size, and difficult manipulation of the encapsulated 2D GaN restrict its further application.…”

Growth mechanisms of monolayer hexagonal boron nitride (h-BN) on metal surfaces: theoretical perspectives

“…In the last decade, several scientic breakthroughs have been made in two-dimensional (2D) materials, [1][2][3][4][5] including graphene, [6][7][8][9][10][11][12][13][14][15][16][17][18][19] hexagonal boron nitride (h-BN), transitionmetal dichalcogenides (TMDCs), [49][50][51][52][53][54][55][56][57][58][59][60][61][62][63][64][65][66] layered double hydroxides (LDHs), [67][68][69][70][71][72][73][74] metal-organic frameworks (MOFs), [75][76][77][78][79] black phosphorus (BP),…”

“…In the last decade, several scientific breakthroughs have been made in two-dimensional (2D) materials, 1–5 including graphene, 6–19 hexagonal boron nitride ( h -BN), 20–48 transition-metal dichalcogenides (TMDCs), 49–66 layered double hydroxides (LDHs), 67–74 metal–organic frameworks (MOFs), 75–79 black phosphorus (BP), 80–87 and so many others. 88–116 In particular, 2D h -BN, a geometrical analogue to graphene, is extensively studied due to its distinctive chemical and physical features.…”