RF-MBE growth of cubic InN nano-scale dots on cubic GaN

Suzuki, Junichiro; Orihara, M.; Yagi, Shuhei; Hijikata, Yasuto; Yaguchi, Hiroyuki

doi:10.1016/j.jcrysgro.2012.12.050

Cited by 6 publications

(7 citation statements)

References 10 publications

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“…This indicates that the three‐dimensional growth of c‐InN took place. Significant differences were not found in the pattern from those for c‐InN dots grown using the just substrates under similar conditions, which was previously reported in our publications .…”

Section: Resultssupporting

confidence: 88%

“…Similar structures are also observed for c‐GaN grown using Si (001) substrates . This is due to the existence of two orthogonal domains of c‐GaN: one domain is c‐GaN (001) of which the [110] direction is parallel to [110] of a substrate, while it is parallel to of the substrate in the other domain. The typical scale of the domain size is 300–500 nm, as shown in the image of a c‐GaN surface grown on a MgO (001) substrate taken by atomic force microscopy (AFM) in Fig.…”

Section: Introductionsupporting

confidence: 67%

“…MgO (001) substrates enable us to grow c‐GaN and c‐InN with very high phase purity . However, mosaic structures consisting of many grains are often observed on the surface of c‐GaN grown on MgO (001) substrates . Similar structures are also observed for c‐GaN grown using Si (001) substrates .…”

Section: Introductionmentioning

confidence: 77%

“…By using a combination of cubic phase nitride semiconductors, it is possible to extend the applicable wavelength range because various experimental and theoretical studies suggest that metastable cubic InN (c‐InN) has a smaller bandgap than conventional hexagonal InN . Previously, we reported the self‐organized growth of c‐InN nanoscale dots on cubic GaN (c‐GaN) layers using MgO (001) substrates by RF‐N 2 ‐plasma molecular beam epitaxy (RF‐MBE) . The c‐InN dots exhibited a tendency to align laterally along the 〈110〉 directions on the c‐GaN (001) surface.…”

Section: Introductionmentioning

confidence: 99%

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Self‐organized growth of cubic InN dot arrays on cubic GaN using MgO (001) vicinal substrates

Ishii

Yagi

Yaguchi

2016

Physica Status Solidi (b)

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Cubic zincblende InN (c‐InN) nanoscale dot arrays are grown on cubic GaN (c‐GaN) by RF‐molecular beam epitaxy using MgO (001) vicinal substrates oriented 3.5° toward [110]. The obtained dot arrays have longer ordering length compared with those grown using conventional on‐axis (just) substrates. The c‐GaN underlayer grown on the vicinal substrate exhibits a single‐domain crystalline structure, while that grown on the just substrate is a mixture of two orthogonal crystalline domains. The change in the c‐GaN domain structure leads to the enlarged domain size and lower density of domain boundaries on the c‐GaN (001) surface in [1–10]. The longer ordering length of the c‐InN dot on the vicinal substrates is reflected by the decrease in the c‐GaN domain boundary that disrupts the lateral ordering of the dot arrays. Atomic force microscope image of c‐InN dots grown on a single‐domain c‐GaN. The sample was fabricated using a MgO (001) vicinal substrate.

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Section: Resultssupporting

confidence: 88%

Section: Introductionsupporting

confidence: 67%

Section: Introductionmentioning

confidence: 77%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Self‐organized growth of cubic InN dot arrays on cubic GaN using MgO (001) vicinal substrates

Ishii

Yagi

Yaguchi

2016

Physica Status Solidi (b)

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“…Straininduced self-organized growth of nano-scale semiconductor dots is one of the convenient methods to obtain high quality quantum dots with high area density [4][5][6][7]. We have recently reported the self-organized growth of nanoscale dots of cubic zincblende phase InN (c-InN) on cubic phase GaN (c-GaN) underlayers by RF-N 2 plasma molecular beam epitaxy (RF-MBE) [8]. Although the cubic phase is metastable for the nitrides, they have several advantages in practical viewpoint compared to nitrides in the hexagonal wurtzite phase.…”

Section: Introductionmentioning

confidence: 99%

Stacked structure of self‐organized cubic InN nano‐dots grown by molecular beam epitaxy

Yagi¹,

Suzuki²,

Orihara³

et al. 2013

Phys. Status Solidi C

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A two‐stacked cubic (c‐) InN/c‐GaN nano‐scale dot structure is fabricated on a MgO(001) substrate by RF‐N2 molecular beam epitaxy and its microstructures are investigated by scanning transmission electron microscopy (STEM). The cubic lattice structure of InN dots is verified by STEM observations. It is implied that c‐InN dots formed on a smooth c‐GaN surface have the {111} facets. The c‐GaN cap layer has an uneven surface, which reflects the shape of the c‐InN dots embedded beneath the cap layer. InN selectively deposits in concave regions on the c‐GaN cap layer, which appear above in‐between positions of embedded dots. Thus, stacked c‐InN/c‐GaN dots do not tend to align vertically. These results open the possibility for multi‐stacking structures of c‐InN dots and their application to high‐performance optoelectronic devices based on the nitride semiconductors. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Synthesis and characterization of InN quantum dots for optoelectronic applications

Ahmad

Aslam

Mustafa

et al. 2018

Optik

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RF-MBE growth of cubic InN nano-scale dots on cubic GaN

Cited by 6 publications

References 10 publications

Self‐organized growth of cubic InN dot arrays on cubic GaN using MgO (001) vicinal substrates

Self‐organized growth of cubic InN dot arrays on cubic GaN using MgO (001) vicinal substrates

Stacked structure of self‐organized cubic InN nano‐dots grown by molecular beam epitaxy

Synthesis and characterization of InN quantum dots for optoelectronic applications

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