Abstract:We have studied van der Waals epitaxy of indium nitride (InN) on graphitic substrates using radio frequency plasma assisted molecular beam epitaxy (RF-MBE) and droplet elimination by radical ion beam (DERI) method. InN nanocrystals smaller than ~ 100 nm were densely grown on the single layer graphene supported on SiO2/Si while larger hexagonal shape nanocrystals larger than 500 nm were obtained on the thick graphite. Our result suggested that both defects on the graphitic substrate and flatness plays important… Show more
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