RF/Microwave Power Amplifiers: The Development Route and State-of-the-Art

Li, Xuguang; Fu, Haipeng; Ma, Kaixue; Zhu, Shou‐Kui; Cheng, Qian‐Fu

doi:10.1142/s0218126620300044

Cited by 6 publications

(7 citation statements)

References 75 publications

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“…Its performance metrics include output power, , gain, , power added efficiency (PAE), carrier frequency, , and linearity. When a PA is designed, it should be designed for these parameters to be high but to consume very minimal power [59,60]. PA can be sorted into a linear PA or switching-mode PA (SMPA) based on the biases that are applied to the RF transistors.…”

Section: Power Amplifiersmentioning

confidence: 99%

“…It can be further classified into linear class-A, -B, -AB, and -C; and SMPA class-D, -E, and -F [59,60]. Apart from the classes of PAs, its architecture is another important factor that needs to be considered when designing an application-specific PA. A myriad of architectures, such as envelope elimination and restoration (EER), envelope tracking (ET), Doherty (DPA), linear amplification using nonlinear components (LINC), distributed PA [59,61], differential cascade, and power combining [60], have been developed. These PA architectures can increase the PAE without losing linearity or in certain cases with an improved linearity [61].…”

Section: Power Amplifiersmentioning

confidence: 99%

“…The evaluation was conducted using the FoM that considers the performance metrics of the PAs. It was introduced by the International Technology Roadmap for Semiconductors (ITRS) and is defined as in (5) [59]. The FoM values are calculated and tabulated as in Table IV.…”

Section: Power Amplifiersmentioning

confidence: 99%

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Assessing the Figures of Merit of Graphene-Based Radio Frequency Electronics: A Review of GFET in RF Technology

Norhakim¹,

Hawari²,

Burhanudin³

2022

IEEE Access

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Graphene has been extensively investigated in the context of electronic components due to its attractive properties, such as high carrier mobility and saturation velocity. In the past decade, the graphene field-effect transistor (GFET) has been considered one of the potential devices to be used in future radio frequency (RF) applications and can help usher in the Internet of Things and the 5G communication network. This review presents recent developments of GFETs in RF applications with a focus on components such as amplifiers, frequency multipliers, phase shifters, mixers, and oscillators. Initially, the figures of merit (FoMs) for the GFET are briefly described to understand how they affect these RF components. Subsequently, the FoMs of GFET-based RF components are compared with other non-GFET-based RF components. It is found that, due to its zero-band gap and ambipolar characteristics, GFETs are more suitable for use in frequency multiplier and phase shifter applications, outperforming non-GFET-based RF components. Finally, future research on GFETs themselves as well as GFET-based RF components is recommended. This review provides valuable insights into such components that could give rise to innovative applications in industry.

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Section: Power Amplifiersmentioning

confidence: 99%

Section: Power Amplifiersmentioning

confidence: 99%

See 1 more Smart Citation

Assessing the Figures of Merit of Graphene-Based Radio Frequency Electronics: A Review of GFET in RF Technology

Norhakim¹,

Hawari²,

Burhanudin³

2022

IEEE Access

View full text Add to dashboard Cite

show abstract

“…The second category encompasses switching PAs that utilize the transistor as a switch to modulate the output voltage or current. Although class F is typically recognized as a switching PA, it can also operate as a transconductance PA based on the intensity of the active device's drive [7]. These PAs fall under the switched-mode classes, such as D, E, and F [8] [9].…”

Section: Introductionmentioning

confidence: 99%

A Classification and Comparative Overview of CMOS Radio-Frequency Power Amplifiers

Eid,

Ibrahim,

Abouelnaga

2023

Industrial Technology Journal

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This paper presents a comprehensive classification and comparative overview of CMOS radio-frequency (RF) power amplifiers (PAs) and proposes novel insights into their design and applications. Our research focuses on the significance of RF CMOS power amplifiers in contemporary communication systems, specifically their role in enabling the advancements of emerging technologies such as 5G. We delve into the various RF CMOS power amplifier classes, including linear PA classes (A, AB, B, and C) and switching PAs (Class D, Class E, and Class F). By evaluating essential performance metrics such as output power (P_out), drain efficiency (DE), and power-added efficiency (PAE), we provide a thorough understanding of the operational principles and distinct characteristics of each class. This comparative analysis offers a range of options to meet specific requirements and ensures seamless signal transmission in modern communication systems. With a particular emphasis on the demands of 5G networks for high-speed and high-capacity wireless communication, we emphasize the importance of these power amplifiers in achieving reliable and efficient connectivity. Our research contributes to the advancement of RF CMOS power amplifier design and offers valuable insights for the development of future communication systems.

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“…This is a challenge because electromagnetic (EM) signals are more susceptible to system-level noise at lower amplitudes (i.e., reduced signal-tonoise ratio). Beyond that, lower voltage signals often lack the strength needed to drive downstream circuits or antennas [2].…”

Section: List Of Tablesmentioning

confidence: 99%

An adaptive self-biased class-e power amplifier

Min

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As the rapid development of 5G system and wireless communication technology, communication systems emphasize more on high-speed and stable information transmission and energy consumption, which directly promotes the update iteration of RF hardware design. As an energy-consuming device and the last stage device of the transmitter, the power amplifier determines the overall performance of the transmitter system. Theoretically, the class E power amplifier can reach 100% efficiency, the energy utilization rate is high, and it has the advantages of simple structure. Therefore, in the environment of highly integrated design and rapid development of mobile devices, Class E power amplifiers with high efficiency have gradually attracted people's attention.

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RF/Microwave Power Amplifiers: The Development Route and State-of-the-Art

Cited by 6 publications

References 75 publications

Assessing the Figures of Merit of Graphene-Based Radio Frequency Electronics: A Review of GFET in RF Technology

Assessing the Figures of Merit of Graphene-Based Radio Frequency Electronics: A Review of GFET in RF Technology

A Classification and Comparative Overview of CMOS Radio-Frequency Power Amplifiers

An adaptive self-biased class-e power amplifier

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