RF MOSFETs

Abstract

In this article, the RF performance of different MOSFET architectures such as Silicon‐On‐Insulator (SOI), Lightly Doped Drain (LDD) MOSFET, Graphene FET, and Negative Capacitance (NC) FET have been reported based on the previously reported work in the form of equivalent circuits. Using the data reported in the literature, the cutoff frequency and maximum frequency of oscillation have been summarized with varying channel lengths. Compared results show that multigate architecture results in higher cutoff frequency and a maximum frequency of oscillation, which can be further increased by decreasing the channel length of the MOSFET architecture. However, the deterioration in the resulting device gain at lower channel length has also been reported. Furthermore, the performance of SOI, Silicon‐on‐Nothing (SON), Double Gate (DG), Double‐Gate Silicon‐On‐Insulator (DGSOI), and Empty Space in Double‐Gate (ESDG) architectures have been explored using ATLAS TCAD software tool for RF and digital parameters investigation. The various parameters explored in this article are current density, electric field, breakdown voltage, impact ionization rate, scattering parameters, noise conductance, minimum noise figure, and cross‐correlation factor. The presented results show that, for the same drain current value, ESDG architecture has higher device gain compared to other devices used for comparison along with higher cutoff frequency. However, this higher device gain comes at the cost of a slightly higher minimum noise figure but with improved noise conductance and cross‐correlation factor (slightly higher than DG). Thus, ESDG is a reliable candidate for LNA design compared to other devices.