RF noise investigation in High-k/Metal Gate 28-nm CMOS transistors

Abstract

In order to pursue Moore's law, the recent introduction of new Gate stack using High-k dielectrics and Metal Gate (H-kIMG) for CMOS has been a key point to downscale the "equivalent oxide thickness" (EOT). Within this context, this paper intends to investigate RF noise performance of a recent Low Power (LP) 28-nm H-kIMG CMOS Technology. For this purpose, S-parameters have been measured up to 110GHz to accurately extract an RF Small Signal Equivalent Circuit (SSEC), required to extract a two-temperature noise model. The technology offers a minimum noise figure NFmin of O.8dB (with an associated gain G. equal to 14dB) @20GHz, for a DC drain current of 13SmA/mm: these performances well compete with those previously reported for other H-kIMG technology.

Analytic bounds on amplifier gain-bandwidth product from complex power flow

“…"nonideal L" consists of 100pH in series with 100Ω. "FET" is a detailed 28nm CMOS n-transistor model from [16]. y-axis ticks are at ω = ±2πfmax of fet (fmax =184GHz) -as expected the unrestricted power region extends to fmax with ideal C and L.…”

RF and broadband noise investigation in High‐k/Metal Gate 28‐nm CMOS bulk transistor

“…The resistances are determined by the y ‐intercepts of the plot representing the real parts of the Z‐parameters as a function of ( V GS − V TH ) −1 (Figure ), determined over a broadband frequency range .…”

“…Within this context, the aim of this paper is to investigate radio frequency (RF) and broadband noise performance of a recent 28‐nm H‐ k /MG CMOS Bulk technology node , benchmarked to similar technology .…”

RF power potential of High-k metal gate 28 nm CMOS technology

“…This later permits higher integration and exhibits higher cut off frequency f T . However, a decrease of f MAX is observed due to gate resistance degradation and higher Miller effect [3]. This f MAX reduction is the main drawback for radiofrequency performance.…”