RF Nonlinear Device Characterization Yields Improved Modeling Accuracy

Smith, Martin A.; Howard, T.S.; Anderson, Kendra; Pavio, A.M.

doi:10.1109/mwsym.1986.1132198

Cited by 35 publications

(2 citation statements)

References 2 publications

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“…1) was used to characterize the two types of MESFETs. Conventional pulsed I-V measurement 0018-9480/01$10.00 ©2001 IEEE [7] begins from a quiescent point where a steady-state trap density is maintained. Submicrosecond pulses are then applied to probe various on states without perturbing the trap density.…”

Section: Model Constructionmentioning

confidence: 99%

A phenomenologically based transient SPICE model for digitally modulated RF performance characteristics of GaAs MESFETs

Leoni

Shirokov

Bao

et al. 2001

IEEE Trans. Microwave Theory Techn.

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A phenomenologically based transient SPICE model was developed for GaAs MESFETs. The model accounts for both trapping and detrapping effects; hence, it can simultaneously simulate low-frequency dispersion and gate-lag characteristics. This is different from conventional models, which can simulate either effect, but not both. The present model has been used to describe both surface-and substrate-related trapping phenomena in epitaxial or ion-implanted MESFETs. The model was experimentally verified in terms of pulsed I-V characteristics and pulsed ac response.

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Section: Model Constructionmentioning

confidence: 99%

A phenomenologically based transient SPICE model for digitally modulated RF performance characteristics of GaAs MESFETs

Leoni

Shirokov

Bao

et al. 2001

IEEE Trans. Microwave Theory Techn.

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show abstract

“…The 180 degrees phase difference corresponded to the minimum mixing transconductance and the sensitivity to the gate bias as described above was verified, but the simulations failed to predict the degree of variation necessary to account for the observed conversion gain range. More data relevant to high-frequency current-voltage characteristics as obtained with Smith et al's technique [17], for instance, would be necessary to pursue further this idea. Nevertheless, this pinch-off voltage shift concept brings enough physical insight to support our simulations.…”

mentioning

confidence: 99%

FET up-converter design using load-dependent mixing transconductance

Fikart

Lord

1989

IEEE Trans. Microwave Theory Techn.

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In presenting this thesis in partial fulfilment of the requirements for an advanced degree at the University of British Columbia, I agree that the Library shall make it freely available for reference and study. I further agree that permission for extensive copying of this thesis for scholarly purposes may be granted by the head of my department or by his or her representatives. It is understood that copying or publication of this thesis for financial gain shall not be allowed without my written permission.

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Rf/Microwave Systems

2021

Microwave Circuit Design

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RF Nonlinear Device Characterization Yields Improved Modeling Accuracy

Cited by 35 publications

References 2 publications

A phenomenologically based transient SPICE model for digitally modulated RF performance characteristics of GaAs MESFETs

A phenomenologically based transient SPICE model for digitally modulated RF performance characteristics of GaAs MESFETs

FET up-converter design using load-dependent mixing transconductance

Rf/Microwave Systems

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