rf plasma oxidation of Ni thin films sputter deposited to generate thin nickel oxide layers

Hoey, Megan L.; Carlson, Joel; Osgood, R. M.; Kimball, Briant A.; Buchwald, Walter R.

doi:10.1063/1.3499661

Cited by 23 publications

(10 citation statements)

References 7 publications

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“…There are several techniques to prepare NiO layer, such as thermal oxidation 25 26 , anodic oxidation 27 28 , thermal spray 29 , and plasma oxidation. O 2 plasma-supported oxidation has several advantages over other oxidation techniques, e.g., fast oxidation capability, low temperature process, and ease of forming uniform and dense layer 30 31 . NiO layers are generally formed at high temperatures above 400 °C 32 , but such a high-temperature process cannot be applied to plastic substrate-based flexible devices.…”

Section: Resultsmentioning

confidence: 99%

Self-assembled nanostructured resistive switching memory devices fabricated by templated bottom-up growth

Song

Lee

2016

Sci Rep

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Metal-oxide-based resistive switching memory device has been studied intensively due to its potential to satisfy the requirements of next-generation memory devices. Active research has been done on the materials and device structures of resistive switching memory devices that meet the requirements of high density, fast switching speed, and reliable data storage. In this study, resistive switching memory devices were fabricated with nano-template-assisted bottom up growth. The electrochemical deposition was adopted to achieve the bottom-up growth of nickel nanodot electrodes. Nickel oxide layer was formed by oxygen plasma treatment of nickel nanodots at low temperature. The structures of fabricated nanoscale memory devices were analyzed with scanning electron microscope and atomic force microscope (AFM). The electrical characteristics of the devices were directly measured using conductive AFM. This work demonstrates the fabrication of resistive switching memory devices using self-assembled nanoscale masks and nanomateirals growth from bottom-up electrochemical deposition.

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Section: Resultsmentioning

confidence: 99%

Self-assembled nanostructured resistive switching memory devices fabricated by templated bottom-up growth

Song

Lee

2016

Sci Rep

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“…Capacitively coupled radio frequency (CCRF) plasma has been widely used as a low temperature plasma processing medium for material processing in many fields including microelectronics, aerospace, and biology. [1][2][3][4][5] Due to the energetic ions, chemically active species, radicals, and also energetic neutral species, CCRF discharges are widely studied for various applications in different pressure ranges, ranging from few mTorr to atmospheric pressure. [6][7][8][9][10][11][12][13][14][15][16] In geometrically asymmetric discharge (when the area of the grounded electrode is much larger than the area of the powered electrode), a dc self-bias is generated naturally because of the different electrode sizes and develops in order to compensate electron and ion flux to each electrode within one rf period.…”

mentioning

confidence: 99%

Influence of finite geometrical asymmetry of the electrodes in capacitively coupled radio frequency plasma

Bora

Soto

2014

Physics of Plasmas

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“…There are two routes to fabricate NiO x films by using sputtering method. The first one is similar to the evaporation method, which needs to sputter Ni films first and then oxidize them into NiO x . The other route is called reactive sputtering, which is usually conducted in an oxygen atmosphere, so that the sputtered Ni atoms react with O 2 to form NiO x on the substrates.…”

Section: Niox‐based Planar Pscsmentioning

confidence: 99%

Nickel Oxide as Efficient Hole Transport Materials for Perovskite Solar Cells

Yin¹,

Guo²,

Xie³

et al. 2019

Solar RRL

182

127

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Organic–inorganic halide perovskite solar cells (PSCs) have achieved great success in recent years with a demonstrated power conversion efficiency (PCE) increasing rapidly from 3.8% to 22.3% for single junction devices. Most high‐performance PSCs consist of a perovskite absorber sandwiched between an electron transport layer (ETL) and a hole transport layer (HTL), which extracts electrons (holes) and blocks holes (electrons) from the absorber efficiently. Inorganic hole transport materials have extracted extensive attention due to their higher mobility and better stability. Particularly, the excellent hole selective transport property of nickel oxide (NiOx) has been highlighted by its recent application in organometallic halide PSCs, due to the favorable band alignment formed between the halide perovskite absorber and NiOx HTL. This comprehensive review summarizes the recent progress in the fabrication of NiOx films and their application in PSCs. Special attention is paid to the optoelectronic properties of NiOx films, which strongly depend on the synthesis methods and post‐treatment conditions, as well as the resulting photovoltaic device performance. Surface modification and doping strategies that are used to improve the optoelectronic properties of NiOx films and the resulting device performance are discussed with emphasis. Finally, a short perspective of NiOx‐based PSCs is also provided.

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rf plasma oxidation of Ni thin films sputter deposited to generate thin nickel oxide layers

Cited by 23 publications

References 7 publications

Self-assembled nanostructured resistive switching memory devices fabricated by templated bottom-up growth

Self-assembled nanostructured resistive switching memory devices fabricated by templated bottom-up growth

Influence of finite geometrical asymmetry of the electrodes in capacitively coupled radio frequency plasma

Nickel Oxide as Efficient Hole Transport Materials for Perovskite Solar Cells

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