RF-sputtered CuInSe2 thin films

Piekoşzewski, J.; Loferski, J. J.; Beaulieu, R.; Beall, James R.; Roessler, B.; Shewchun, J.

doi:10.1016/0165-1633(80)90012-x

Cited by 73 publications

(15 citation statements)

References 8 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Cu-poor films are found to have higher optical band gap than Cu-rich films. Similar trend was observed in the case of CuInSe 2 films [14][15][16]. Jaffe and Zunger [21], based on band structural calculations in the case of ternary chalcopyrite compounds predicted change in band gap due to p-d hybridization between Cu d-levels and Se p-levels.…”

Section: Optical Propertiessupporting

confidence: 64%

“…The results on the dependence of physical properties of copper indium diselenide [14][15][16] and copper indium gallium diselenide [3] on Cu/In and Cu/(In+ Ga) ratios, respectively suggest that there is a need to take up investigations on the effect of Cu/ (Zn+ Sn) ratio on the properties of CZTSe films. These studies enable us to determine the limits of Cu/(Zn +Sn) ratio within which single phase CZTSe films can be obtained and also to optimize the Cu/(Zn +Sn) ratio to obtain CZTSe thin films with the desired properties to suit the device needs.…”

Section: Introductionmentioning

confidence: 92%

See 1 more Smart Citation

Effect of Cu/(Zn+Sn) ratio on the properties of co-evaporated Cu2ZnSnSe4 thin films

Babu

Kumar

Bhaskar

et al. 2010

Solar Energy Materials and Solar Cells

127

View full text Add to dashboard Cite

Section: Optical Propertiessupporting

confidence: 64%

Section: Introductionmentioning

confidence: 92%

Effect of Cu/(Zn+Sn) ratio on the properties of co-evaporated Cu2ZnSnSe4 thin films

Babu

Kumar

Bhaskar

et al. 2010

Solar Energy Materials and Solar Cells

127

View full text Add to dashboard Cite

“…Its high absorption coefficient, low toxicity, and electrical and optical properties make this compound a major candidate for the next generation of solar cells. Because of this high potential, researchers have developed a variety of techniques to deposit CIS thin films such as flash evaporation [1] [2], co-evaporation [3], sputtering [4] [5], molecular beam epitaxy [6], spray pyrolysis [7] [8], chemical vapour deposition [9] , etc.…”

Section: Introductionmentioning

confidence: 99%

Single step deposition method for nearly stoichiometric CuInSe2 thin films

et al. 2011

View full text Add to dashboard Cite

This paper reports the production of high quality copper indium diselenide thin films using pulsed DC magnetron sputtering from a powder target. As grown thin films consisted of pinhole free, densely packed grains. X ray diffraction showed that films were highly orientated in the (112) and/or (204)/(220) direction with no secondary phases present. The most surprising and exciting outcome of this study was that the as-grown films were of near stoichiometric composition, almost independent of the composition of the starting material.No additional steps or substrate heating were necessary to incorporate selenium and create single phase CuInSe 2 . Electrical properties obtained by hot point probe and four point probe gave values of low resistivity and showed that the films were all p type. The physical and structural properties of these films were analyzed using x-ray diffraction, scanning electron microscopy and atomic force microscopy. Resistivity measurements were carried out using the four point probe and hot probe methods. The single step deposition process can cut down the cost of the complex multi step processes involved in the traditional vacuum based deposition techniques. KeywordsCuInSe 2 thin films, pulsed DC magnetron sputtering, stoichiometric CuInSe 2 films, photovoltaic, solar cells, single step CuInSe 2 films.

show abstract

“…In these films the diffraction lines (103 and 211) of the chalcopyrite structure are not observed in the substrate temperature range up to 500ºC. Evidence of a chalcopyrite structure of RF-sputtered CIS films prepared by others groups in the substrate temperature range 400ºC-500ºC have been reported [5]. In figure 3-b), we observe that the film deposited at 300ºC undergoes a structural change which reflects itself in the change from the preferential orientation (112) to what appears to be a preferential (220, 204) orientation.…”

Section: Resultsmentioning

confidence: 76%

Comparative study of the structural and optical properties of CIS films prepared by RFmagnetron sputtering and selenization of elemental layers

et al. 2001

View full text Add to dashboard Cite

We report on a study where the properties of films obtained by RF-magnetron sputtering and by Selenization of elemental precursor layers are analysed by Raman scattering, x-ray diffraction and optical measurements. Three routes were followed to prepare CIS films on glass. CIS type-I was prepared by selenization at various temperatures, CIS type-II was prepared by RF-magnetron sputtering on room temperature substrate followed by annealing at 450ºC in air for 10 min and CIS type-III was prepared by RF-magnetron sputtering on a substrate at a temperature ranging from 200ºC up to 500ºC with a post-deposition annealing in the same conditions as for CIS type-II. Correlating the results from x-ray diffraction with the Raman scattering and optical measurements it was possible to establish unequivocally the formation of CIS with the chalcopyrite structure for CIS type-I at 400ºC. Through the same procedure it was possible to establish a way to produce CIS type-II with the chalcopyrite structure. A high density of defects was inferred from the transmission results. Finally the growth dynamics of CIS type-III was studied. It was observed a structural/compositional transition around substrate temperature of 300ºC. It was observed that all the films had a sphalerite structure even for the highest substrate temperatures. It was establish the need for a post-deposition annealing to obtain CIS type-III with the chalcopyrite structure. The Raman scattering was found to be a very sensitive technique that allowed us to uncover a difference in the CIS type-I and II with the chalcopyrite structure.

show abstract

RF-sputtered CuInSe2 thin films

Cited by 73 publications

References 8 publications

Effect of Cu/(Zn+Sn) ratio on the properties of co-evaporated Cu2ZnSnSe4 thin films

Effect of Cu/(Zn+Sn) ratio on the properties of co-evaporated Cu2ZnSnSe4 thin films

Single step deposition method for nearly stoichiometric CuInSe2 thin films

Comparative study of the structural and optical properties of CIS films prepared by RFmagnetron sputtering and selenization of elemental layers

Contact Info

Product

Resources

About