GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 23rd Annual Technical Digest 2001 (Cat. No.01CH37191)
DOI: 10.1109/gaas.2001.964370
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RF vs. DC breakdown: implication on pulsed radar applications [MESFETs]

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“…Any on state or off state drain-source breakdown voltage characterizations [3,7,9] were made due to the small sampling size. So, we couldn't detect breakdown walkout.…”
Section: Methodsmentioning
confidence: 99%
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“…Any on state or off state drain-source breakdown voltage characterizations [3,7,9] were made due to the small sampling size. So, we couldn't detect breakdown walkout.…”
Section: Methodsmentioning
confidence: 99%
“…Nevertheless, the behaviour of a component in real time all along its life can't be adressed. That's why accelerated ageing tests are generally applied so that failure mechanisms would be evaluated using specific constraints as temperature, RF overdrive stress or current density [6,7].…”
Section: Methodsmentioning
confidence: 99%
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