RHEED oscillations in spinel ferrite epitaxial films grown by conventional planar magnetron sputtering

Ojima, Taisuke; Tainosho, Takeshi; Sharmin, Sonia; Yanagihara, Hideto

doi:10.1063/1.5012133

Cited by 5 publications

(2 citation statements)

References 20 publications

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“…Such a subunit cell growth is rare. It had until now been observed only for the growth of other complex cells, such as those of the spinel [28] or garnet [29] phases of iron oxides.…”

Section: Resultsmentioning

confidence: 99%

Ultrathin regime growth of atomically flat multiferroic gallium ferrite films with perpendicular magnetic anisotropy

Homkar

Preziosi

Devaux

et al. 2019

Phys. Rev. Materials

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Room temperature magnetoelectric multiferroic thin films offer great promises for the spintronics industry. The actual development of devices, however, requires the production of ultrathin atomically smooth films of high crystalline quality in order to increase spin transfer efficiency. Using both high-resolution transmission electron microscopy and atomically resolved electron energy loss spectroscopy, we unveil the complex growth mechanism of a promising candidate, gallium ferrite. This material, with its net room-temperature magnetization of approximately 100 emu/cm 3 , is an interesting challenger to the antiferromagnetic bismuth ferrite. We obtained atomically flat gallium ferrite ultrathin films with a thickness control down to one fourth of a unit cell. Films with thicknesses as low as 7 nm are polar and show a perpendicular magnetic anisotropy of 3 × 10 3 J/m 3 at 300 K, which makes them particularly attractive for spin current transmission in spintronic devices, such as spin Hall effect based heavy-metal / ferrimagnetic oxide heterostructures.

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“…Such a subunit cell growth is rare. It had until now been observed only for the growth of other complex cells, such as those of the spinel [28] or garnet [29] phases of iron oxides.…”

Section: Resultsmentioning

confidence: 99%

Ultrathin regime growth of atomically flat multiferroic gallium ferrite films with perpendicular magnetic anisotropy

Homkar

Preziosi

Devaux

et al. 2019

Phys. Rev. Materials

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“…Reflection high-energy electron diffraction is commonly used for monitoring the structure formation during molecular beam epitaxy. However, the method is only compatible with sputter deposition processes when using differential pumping, which affects the growth conditions significantly. X-ray methods do not suffer from this limitation, and are therefore well established for monitoring industrially relevant sputter deposition processes. − We have combined real-time synchrotron experiments during magnetron sputter deposition and annealing of Pd/amorphous germanium (a-Ge) bilayers.…”

Section: Introductionmentioning

confidence: 99%

In Situ Study of the Interface-Mediated Solid-State Reactions during Growth and Postgrowth Annealing of Pd/a-Ge Bilayers

Krause

Abadias

Babonneau

et al. 2023

ACS Appl. Mater. Interfaces

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Ohmic or Schottky contacts in micro- and nanoelectronic devices are formed by metal–semiconductor bilayer systems, based on elemental metals or thermally more stable metallic compounds (germanides, silicides). The control of their electronic properties remains challenging as their structure formation is not yet fully understood. We have studied the phase and microstructure evolution during sputter deposition and postgrowth annealing of Pd/a-Ge bilayer systems with different Pd/Ge ratios (Pd:Ge, 2Pd:Ge, and 4Pd:Ge). The room-temperature deposition of up to 30 nm Pd was monitored by simultaneous, in situ synchrotron X-ray diffraction, X-ray reflectivity, and optical stress measurements. With this portfolio of complementary real-time methods, we could identify the microstructural origins of the resistivity evolution during contact formation: Real-time X-ray diffraction measurements indicate a coherent, epitaxial growth of Pd(111) on the individual crystallites of the initially forming, polycrystalline Pd2Ge[111] layer. The crystallization of the Pd2Ge interfacial layer causes a characteristic change in the real-time wafer curvature (tensile peak), and a significant drop of the resistivity after 1.5 nm Pd deposition. In addition, we could confirm the isostructural interface formation of Pd/a-Ge and Pd/a-Si. Subtle differences between both interfaces originate from the lattice mismatch at the interface between compound and metal. The solid-state reaction during subsequent annealing was studied by real-time X-ray diffraction and complementary UHV surface analysis. We could establish the link between phase and microstructure formation during deposition and annealing-induced solid-state reaction: The thermally induced reaction between Pd and a-Ge proceeds via diffusion-controlled growth of the Pd2Ge seed crystallites. The second-phase (PdGe) formation is nucleation-controlled and takes place only when a sufficient Ge reservoir exists. The real-time access to structure and electronic properties on the nanoscale opens new paths for the knowledge-based formation of ultrathin metal/semiconductor contacts.

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Review: Geometric interpretation of reflection and transmission RHEED patterns

Hafez

Zayed

Elsayed-Ali

2022

Micron

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RHEED oscillations in spinel ferrite epitaxial films grown by conventional planar magnetron sputtering

Cited by 5 publications

References 20 publications

Ultrathin regime growth of atomically flat multiferroic gallium ferrite films with perpendicular magnetic anisotropy

Ultrathin regime growth of atomically flat multiferroic gallium ferrite films with perpendicular magnetic anisotropy

In Situ Study of the Interface-Mediated Solid-State Reactions during Growth and Postgrowth Annealing of Pd/a-Ge Bilayers

Review: Geometric interpretation of reflection and transmission RHEED patterns

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