Richardson-Schottky transport mechanism in ZnS nanoparticles

Hassan, Ali; Khan, Usman; Rafiq, M. A.; Falak, Attia; Narain, Adeela; Tang, Jing; Xu, Xiulai

doi:10.1063/1.4948982

Cited by 16 publications

(7 citation statements)

References 34 publications

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“…The I-V characteristic of all the samples was taken at room temperature in the voltage range −5 V to +5 V. The characteristic curve (figure 4(a)) shows ohmic nature of conductivity through NiO nanoparticles at low bias region that agrees with previously reported data [31]. However, as the voltage is increased beyond a certain value ∼3 V, nonlinear behavior prevails which indicates the conduction mechanism may be either Richardson-Schottky (RS) or Poole Frenkel (PF) or Space charge limited current (SCLC) mechanism [32,33]. The average conductance of all the samples were estimated from the linear fit to the I-V curves (figure 4(a)) which is found to increases with molar concentration (C) (figure 4(b)).…”

Section: Optical and Electrical Properties Of Molar Concentration Var...supporting

confidence: 89%

“…Due to the gradual increase in defect density with sample size, the increase in conductivity with the increase in molar concentration is seen [32][33][34][35]. The I-V characteristic is given by the relation (7) which is in the form [32,35,36]-…”

Section: Optical and Electrical Properties Of Molar Concentration Var...mentioning

confidence: 99%

“…An increase of conductivity of NiO on molar concentration is due to charge separation which confirms with the decrease of band gap. Due to the gradual increase in defect density with sample size, the increase in conductivity with the increase in molar concentration is seen [32][33][34][35]. The I-V characteristic is given by the relation (7) which is in the form [32,35,36]-…”

Section: Optical and Electrical Properties Of Molar Concentration Var...mentioning

confidence: 99%

“…The actual conductance mechanism is investigated by comparing the experimental of β theoretical values i.e. of RS barrier-lowering coefficient (β r ) and PF barrier-lowering coefficient (β p ) [32,[35][36][37][38].…”

Section: Optical and Electrical Properties Of Molar Concentration Var...mentioning

confidence: 99%

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Fabrication of highly sensitive memristive device using NiO nanoparticles synthesized by single step wet chemical method

Pathak,

Kalita,

Choudhury

et al. 2024

Phys. Scr.

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Single step wet chemical method is used to prepare molar concentration varied NiO nanoparticle using PVP as the capping agent. Structural, optical and electrical properties are investigated on the prepared samples and are correlated. TEM shows particle size distribution ~ 3-4nm synthesized in the range 0.001-1M which agrees with XRD and optical measurements. Red shift in band gap is observed from the optical measurement. Because of lesser size distribution of NiO nanoparticles, larger native defect in the form of oxygen vacancies is expected which is utilized in fabrication of memristive devices. The sensitivity of the devices is estimated through Roff/Ron and area of pinched hysteresis loop which shows promising result. Higher sensitivity is explained due to incorporation of more oxygen vacancies during the growth of NiO nanoparticles synthesized at higher concentration. Also to validate our results, comparison of our experimental results is done with the theoretical results obtained from literature.

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Section: Optical and Electrical Properties Of Molar Concentration Var...supporting

confidence: 89%

Section: Optical and Electrical Properties Of Molar Concentration Var...mentioning

confidence: 99%

Section: Optical and Electrical Properties Of Molar Concentration Var...mentioning

confidence: 99%

Section: Optical and Electrical Properties Of Molar Concentration Var...mentioning

confidence: 99%

See 2 more Smart Citations

Fabrication of highly sensitive memristive device using NiO nanoparticles synthesized by single step wet chemical method

Pathak,

Kalita,

Choudhury

et al. 2024

Phys. Scr.

View full text Add to dashboard Cite

show abstract

“…These are called electrode-limited or injection-limited conduction mechanisms. Whereas, the conduction mechanisms which are influenced by properties of the semiconductor material itself; are known as transport-limited or bulk-limited conduction mechanisms 42 .…”

Section: Resultsmentioning

confidence: 99%

Synergistic enhancement in the microelectronic properties of poly-(dioctylfluorene) based Schottky devices by CdSe quantum dots

Muhammad

Tahir

Zeb

et al. 2020

Sci Rep

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This paper reports the potential application of cadmium selenide (CdSe) quantum dots (QDs) in improving the microelectronic characteristics of Schottky barrier diode (SBD) prepared from a semiconducting material poly-(9,9-dioctylfluorene) (F8). Two SBDs, Ag/F8/P3HT/ITO and Ag/F8-CdSe QDs/P3HT/ITO, are fabricated by spin coating a 10 wt% solution of F8 in chloroform and 10:1 wt% solution of F8:CdSe QDs, respectively, on a pre-deposited poly(3-hexylthiophene) (P3HT) on indium tin oxide (ITO) substrate. To study the electronic properties of the fabricated devices, current-voltage (I-V) measurements are carried out at 25 °C in dark conditions. The I-V curves of Ag/F8/P3HT/ITO and Ag/F8-CdSe QDs/P3HT/ITO SBDs demonstrate asymmetrical behavior with forward bias current rectification ratio (RR) of 7.42 ± 0.02 and 142 ± 0.02, respectively, at ± 3.5 V which confirm the formation of depletion region. Other key parameters which govern microelectronic properties of the fabricated devices such as charge carrier mobility (µ), barrier height (φ b ), series resistance (R s ) and quality factor (n) are extracted from their corresponding I-V characteristics. Norde's and Cheung functions are also applied to characterize the devices to study consistency in various parameters. Significant improvement is found in the values of R s , n, and RR by 3, 1.7, and 19 times, respectively, for Ag/F8-CdSe QDs/P3HT/ ITO SBD as compared to Ag/F8/P3HT/ITO. This enhancement is due to the incorporation of CdSe QDs having 3-dimensional quantum confinement and large surface-to-volume area. Poole-Frenkle and Richardson-Schottky conduction mechanisms are also discussed for both of the devices. Morphology, optical bandgap (1.88 ± 0.5 eV) and photoluminescence (PL) spectrum of CdSe QDs with a peak intensity at 556 nm are also reported and discussed.Junction between different materials has a vital role in electronic and optoelectronic devices and is, therefore, one of the significant parts that govern the performance of a device. Well-controlled and easily tunable interfacial properties are always desirable in many electronic and optoelectronic devices. Among different types of junctions in devices, metal-semiconductor (MS) structures provide their role in the form of Schottky barrier diodes (SBDs) 1 . SBDs play a central role in the device functioning 2 as well as is the most widely used type of junctions in semiconductor devices 3 , solar cells 4 and field effect transistors (FETs) 5 . Mostly, commercially available electronic devices are based on inorganic semiconductors due to their high stability and performance 6 . However, due to high cost, high temperature complex processability and mechanical brittleness, inorganic semiconductors are not favorable. On the other hand, organic semiconducting materials are rich in pi-conjugated structures and have gained remarkable attention due to overcoming the issues with inorganic semiconductors. Organic semiconductors offer low temperature processability, low cost, mechanical flexibility, simple methods for devi...

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Dielectric spectroscopic investigations and electrical conduction mechanism of PVDF–NiO nanocomposite thin films

Kaur

Rana

2021

J Mater Sci: Mater Electron

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Richardson-Schottky transport mechanism in ZnS nanoparticles

Cited by 16 publications

References 34 publications

Fabrication of highly sensitive memristive device using NiO nanoparticles synthesized by single step wet chemical method

Fabrication of highly sensitive memristive device using NiO nanoparticles synthesized by single step wet chemical method

Synergistic enhancement in the microelectronic properties of poly-(dioctylfluorene) based Schottky devices by CdSe quantum dots

Dielectric spectroscopic investigations and electrical conduction mechanism of PVDF–NiO nanocomposite thin films

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