Ridge-width dependence on high-temperature continuous-wave operation of native oxide-confined InGaAsN triple-quantum-well lasers

Liu, C.Y.; Yoon, Soon Fatt; Fan, Wenhui; Uddin, Ashraf; Yuan, Shu

doi:10.1109/lpt.2006.871697

Cited by 14 publications

(15 citation statements)

References 17 publications

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“…Note that the results are different from that reported recently [ 20 ]. We believe that the differences are due to the different device dimensions considered since the performance depends strongly on the device dimensions [ 21 , 22 ].…”

Section: Resultsmentioning

confidence: 99%

Thermal Effects and Small Signal Modulation of 1.3-μm InAs/GaAs Self-Assembled Quantum-Dot Lasers

et al. 2010

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We investigate the influence of thermal effects on the high-speed performance of 1.3-μm InAs/GaAs quantum-dot lasers in a wide temperature range (5–50°C). Ridge waveguide devices with 1.1 mm cavity length exhibit small signal modulation bandwidths of 7.51 GHz at 5°C and 3.98 GHz at 50°C. Temperature-dependent K-factor, differential gain, and gain compression factor are studied. While the intrinsic damping-limited modulation bandwidth is as high as 23 GHz, the actual modulation bandwidth is limited by carrier thermalization under continuous wave operation. Saturation of the resonance frequency was found to be the result of thermal reduction in the differential gain, which may originate from carrier thermalization.

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Section: Resultsmentioning

confidence: 99%

Thermal Effects and Small Signal Modulation of 1.3-μm InAs/GaAs Self-Assembled Quantum-Dot Lasers

et al. 2010

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“…The growth was terminated by a 200-nm-thick GaAs capping layer. The wafer was fabricated to 4-μm-wide ridge waveguide laser by pulsed anodic oxidation method [10]. Fig.…”

Section: Experimental Setup Results and Discussionmentioning

confidence: 99%

Temperature Characteristics of Gain Profiles in 1.3-$ \mu\hbox{m}\ p$-Doped and Undoped InAs/GaAs Quantum-Dot Lasers

Wang

Tong

Yoon

et al. 2009

IEEE Electron Device Lett.

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The modal gain and differential gain of 1.3-μm p-doped and undoped InAs/GaAs quantum-dot (QD) lasers have been investigated as a function of injection current under different operation temperatures. The results show that p-doping improves the modal and differential gains in QD lasers at high temperatures. Exponential decrease in the differential gain profiles were observed in both types of lasers from 20 • C to 80 • C. Theoretical calculations based on the rate equation model for the undoped QD laser gain at different temperatures are presented.Index Terms-Differential gain, modal gain, p-doping, quantum dot (QD).

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“…According to previous studies [34,67] regarding the optimization of the ridge height, the entire p-doped layers outside the ridge region were etched through to the QD active region.…”

Section: Fabrication Processmentioning

confidence: 99%

Study of modulation doping and ridge height effects in InAs/GaAs quantum dot lasers

Wang¹

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Ridge-width dependence on high-temperature continuous-wave operation of native oxide-confined InGaAsN triple-quantum-well lasers

Cited by 14 publications

References 17 publications

Thermal Effects and Small Signal Modulation of 1.3-μm InAs/GaAs Self-Assembled Quantum-Dot Lasers

Thermal Effects and Small Signal Modulation of 1.3-μm InAs/GaAs Self-Assembled Quantum-Dot Lasers

Temperature Characteristics of Gain Profiles in 1.3-$ \mu\hbox{m}\ p$-Doped and Undoped InAs/GaAs Quantum-Dot Lasers

Study of modulation doping and ridge height effects in InAs/GaAs quantum dot lasers

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