${\rm Ga}_{2}{\rm O}_{3}$ Nanowire Photodetector Prepared on ${\rm SiO}_{2}/{\rm Si}$ Template

High responsivity in molecular beam epitaxy grown β-Ga2O3 metal semiconductor metal solar blind deep-UV photodetector

“…Visible rejection ratio was estimated by dividing the responsivity at 236 nm (peak response) to that at 450 nm. Excellent visible rejection ratio > 10 5 was observed, which is among the highest reported for epitaxial MBE grown Ga 2 O 3 -based detectors 7,23 and testifies the true solar-blind nature of the devices. The photo currents in steady-state as well as transient measurements were found to be similar ~ 4.6 µA (at 20 V) while the dark current was observed to be in the ~ nA range.…”

“…2 β-Ga 2 O 3 is an emerging wide band gap material (E G ~4.6 eV) which is at the focus of a rapidly-expanding device and materials community for its promise towards enabling nextgeneration high-power transistors [1][2][3] and deep UV solar blind detectors [4][5][6][7][8][9][10][11] towards strategic applications such as missile plume detection and bio-medical sensors. III-nitride alloys (AlGaN), which have been widely explored [12][13][14][15][16] for solar blind UV detection, suffer from lack of native substrates which is a major bottleneck to achieving superior material quality.…”

Self-powered hybrid humidity sensor and dual-band UV photodetector fabricated on back-contact photovoltaic cell

“…It has been reported that the rise and decay time of an n-type metal oxide is associated with the adsorption and desorption of oxygen [19][20][21]. Oxygen molecules adsorb on the thin film surface by capturing free electrons from the metal oxide, creating a low-conductivity depletion layer near the surface of the thin film O 2 (gas) + e − → O − 2 (ads.)…”

β-Ga2O3 nanorod arrays with high light-to-electron conversion for solar-blind deep ultraviolet photodetection

“…The GaOOH NRAs were fabricated as described in our previous reports. 24 The substrate coated with Ga 2 O 3 seed layer was placed in the growth solution of Ga(NO 3 ) 3 $9H 2 O and heated at 150 C for 12 h in an oven. Aer the growth, the product was washed by DI water, dried in air at 80 C. The as-prepared GaOOH NRAs calcined at 700 C for 4 h were converted into the b-Ga 2 O 3 NRAs.…”