Roadmap for Schottky barrier transistors

Abstract

In this roadmap we consider the status and challenges of technologies that use the properties of a rectifying metal-semiconductor interface, known as a Schottky barrier, as an asset for device functionality. We discuss source gated transistors, which allow for excellent electronic characteristics for low power, low frequency environmentally friendly circuits. Also considered are reconfigurable field effect transistors, where the presence of two or more independent gate electrodes can be used to program different functionalities at the device level, providing an important option for ultra-secure embedded devices. Both types of transistors can be used for neuromorphic systems, notably by combining them with ferroelectric Schottky barrier transistors with an increased number analog states. At cryogenic temperatures SB transistors can advantageously serve for the control electronics in quantum computing devices. If the source/drain of the metallic contact becomes superconducting, Josephson junctions with a tunable phase can be realized for scalable quantum computing applications. Developing applications using Schottky barrier devices require physics-based and compact models that can be used for circuit simulations. The roadmap reveals that the main challenges for these technologies are improving processing, access to industrial technologies and modeling tools for circuit simulations.