Roadmap to Gigahertz Organic Transistors

Zschieschang, Ute; Borchert, James W.; Giorgio, Michele; Caironi, Mario; Letzkus, Florian; Burghartz, Joachim N.; Waizmann, Ulrike; Weis, J.; Ludwigs, Sabine; Klauk, Hagen

doi:10.1002/adfm.201903812

Cited by 63 publications

(68 citation statements)

References 80 publications

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“…Considerable improvements are still needed. Contact resistance is a real issue for scaling down OFETs and reaching higher switching frequency . The frequency fT is inversely proportional to the square of the channel length, L according to Equation

f T \propto \frac{μ V_{DS}}{L^{2}}

…”

Section: Charge Transportmentioning

confidence: 99%

Molecular Semiconductors for Logic Operations: Dead‐End or Bright Future?

et al. 2020

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The field of organic electronics has been prolific in the last couple of years, leading to the design and synthesis of several molecular semiconductors presenting a mobility in excess of 10 cm2 V−1 s−1. However, it is also started to recently falter, as a result of doubtful mobility extractions and reduced industrial interest. This critical review addresses the community of chemists and materials scientists to share with it a critical analysis of the best performing molecular semiconductors and of the inherent charge transport physics that takes place in them. The goal is to inspire chemists and materials scientists and to give them hope that the field of molecular semiconductors for logic operations is not engaged into a dead end. To the contrary, it offers plenty of research opportunities in materials chemistry.

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f T \propto \frac{μ V_{DS}}{L^{2}}

…”

Section: Charge Transportmentioning

confidence: 99%

Molecular Semiconductors for Logic Operations: Dead‐End or Bright Future?

et al. 2020

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“…[ 17 ] Since f t is proportional to the bias voltage, some authors have used the voltage‐normalized transition frequency f t /V as a more convenient figure of merit to assess the relative performance of transistor technologies. [ 5,18,19 ] In this case, the highest f t /V value achieved for OFETs is 2.23 MHz V −1 , [ 20 ] achieved by virtue of a metal‐oxide/self‐assembled monolayer dielectric with high areal capacitance (700 nF cm −2 ), a sub‐micron channel length defined via high‐resolution silicon stencil masks and extremely low contact resistance (29 Ω cm) between gold electrodes and a small‐molecule organic semiconductor. These results, however, together with the wide majority of the works on high‐frequency OFETs, included masks and/or evaporation steps in the process flow.…”

Section: Figurementioning

confidence: 99%

Organic Electronics Picks Up the Pace: Mask‐Less, Solution Processed Organic Transistors Operating at 160 MHz

et al. 2021

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Organic printed electronics has proven its potential as an essential enabler for applications related to healthcare, entertainment, energy, and distributed intelligent objects. The possibility of exploiting solution‐based and direct‐writing production schemes further boosts the benefits offered by such technology, facilitating the implementation of cheap, conformable, bio‐compatible electronic applications. The result shown in this work challenges the widespread assumption that such class of electronic devices is relegated to low‐frequency operation, owing to the limited charge mobility of the materials and to the low spatial resolution achievable with conventional printing techniques. Here, it is shown that solution‐processed and direct‐written organic field‐effect transistors can be carefully designed and fabricated so to achieve a maximum transition frequency of 160 MHz, unlocking an operational range that was not available before for organics. Such range was believed to be only accessible with more performing classes of semiconductor materials and/or more expensive fabrication schemes. The present achievement opens a route for cost‐ and energy‐efficient manufacturability of flexible and conformable electronics with wireless‐communication capabilities.

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“…[ 17–20 ] In addition, as the device scale decreases with increasing the integration of the electronic circuits, the adverse effects caused by the contact problems have become more and more important. [ 21,22 ]…”

Section: Introductionmentioning

confidence: 99%

Tuning Interfacial Properties by Spontaneously Generated Organic Interlayers in Top‐Contact‐Structured Organic Transistors

Choi

Seo

et al. 2020

Adv Funct Materials

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Controlling the interfacial properties between the electrode and active layer in organic field‐effect transistors (OFETs) can significantly affect their contact properties, resulting in improvements in device performance. However, it is difficult to apply to top‐contact‐structured OFETs (one of the most useful device structures) because of serious damage to the organic active layer by exposing solvent. Here, a spontaneously controlled approach is explored for optimizing the interface between the top‐contacted source/drain electrode and the polymer active layer to improve the contact resistance (RC). To achieve this goal, a small amount of interface‐functionalizing species is blended with the p‐type polymer semiconductor and functionalized at the interface region at once through a thermal process. The RC values dramatically decrease after introduction of the interfacial functionalization to 15.9 kΩ cm, compared to the 113.4 kΩ cm for the pristine case. In addition, the average field‐effect mobilities of the OFET devices increase more than three times, to a maximum value of 0.25 cm2 V−1 s−1 compared to the pristine case (0.041 cm2 V−1 s−1), and the threshold voltages also converge to zero. This study overcomes all the shortcomings observed in the existing results related to controlling the interface of top‐contact OFETs by solving the discomfort of the interface optimization process.

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Roadmap to Gigahertz Organic Transistors

Cited by 63 publications

References 80 publications

Molecular Semiconductors for Logic Operations: Dead‐End or Bright Future?

Molecular Semiconductors for Logic Operations: Dead‐End or Bright Future?

Organic Electronics Picks Up the Pace: Mask‐Less, Solution Processed Organic Transistors Operating at 160 MHz

Tuning Interfacial Properties by Spontaneously Generated Organic Interlayers in Top‐Contact‐Structured Organic Transistors

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