Robust and fast response solar-blind UV photodetectors based on the transferable 4H-SiC free-standing nanowire arrays

Li, Lan; Yuan, Shuai; Amina, Koshayeva; Zhai, Peichen; Su, Ying; Lou, Rui; Hao, Xiaodong; Shan, Hengsheng; Xue, Tao; Li, Hongmei; Meng, Tao; Jiang, Tao; Ding, Liping; Wei, Guodong

doi:10.1016/j.sna.2022.113878

Cited by 15 publications

(1 citation statement)

References 38 publications

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“…Furthermore, the SiC surface can be thermally oxidized to produce high-quality SiO 2 layers, which effectively protect the device, resulting in reduced dark current and improved detection rates. Currently, various types of SiC PDs with different structures have been developed to meet different demands, including p-n, p-i-n, avalanche PDs, Schottky barrier, and metal-semiconductor-metal (MSM) [9][10][11][12][13][14][15]. Among these, MSM PDs are extensively studied due to their low parasitic capacitance, high operation speed, and ease of integration with field-effect transistors or integrated circuits on a single chip.…”

Section: Introductionmentioning

confidence: 99%

Resonant-cavity-enhanced 4H-SiC thin film MSM UV photodetectors on SiO₂/Si substrates

He,

Jiao,

et al. 2024

J. Phys. D: Appl. Phys.

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Heterogeneous integration of 4H-SiC film with Si substrate can produce UV photodetectors (PD) with higher performance and easier integration with silicon CMOS circuits than homogenous epitaxy of 4H-SiC on SiC substrates. In this study, 1.2 µm thick high-quality single crystalline 4H-SiC thin films were successfully bonded with a SiO2/Si (100) substrates using the Smart-Cut technique, achieving bubble-free bonding interfaces and 6.03 MPa bonding strength. Ultraviolet (UV) PDs of MSM type with a resonant cavity structure were fabricated for the first time using the heterogenous film sample. The device exhibits a low dark current of 1.6×10-13 A in reverse bias of 20 V and a maximum specific detectivity of about 5.2×1012 Jones at 280 nm, which is significant for a device with a resonance-enhanced structure. These results demonstrate a promising approach for the fabrication of SiC devices with silicon CMOS circuits.

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Section: Introductionmentioning

confidence: 99%

Resonant-cavity-enhanced 4H-SiC thin film MSM UV photodetectors on SiO₂/Si substrates

He,

Jiao,

et al. 2024

J. Phys. D: Appl. Phys.

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SiC@NiO Core–Shell Nanowire Networks‐Based Optoelectronic Synapses for Neuromorphic Computing and Visual Systems at High Temperature

Shen,

Wang,

Wei

et al. 2024

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Abstract1D nanowire networks, sharing similarities of structure, information transfer, and computation with biological neural networks, have emerged as a promising platform for neuromorphic systems. Based on brain‐like structures of 1D nanowire networks, neuromorphic synaptic devices can overcome the von Neumann bottleneck, achieving intelligent high‐efficient sensing and computing function with high information processing rates and low power consumption. Here, high‐temperature neuromorphic synaptic devices based on SiC@NiO core–shell nanowire networks optoelectronic memristors (NNOMs) are developed. Experimental results demonstrate that NNOMs attain synaptic short/long‐term plasticity and modulation plasticity under both electrical and optical stimulation, and exhibit advanced functions such as short/long‐term memory and “learning–forgetting–relearning” under optical stimulation at both room temperature and 200 °C. Based on the advanced functions under light stimulus, the constructed 5 × 3 optoelectronic synaptic array devices exhibit a stable visual memory function up to 200 °C, which can be utilized to develop artificial visual systems. Additionally, when exposed to multiple electronic or optical stimuli, the NNOMs effectively replicate the principles of Pavlovian classical conditioning, achieving visual heterologous synaptic functionality and refining neural networks. Overall, with abundant synaptic characteristics and high‐temperature thermal stability, these neuromorphic synaptic devices offer a promising route for advancing neuromorphic computing and visual systems.

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High‐Responsivity Self‐Powered Photoelectrochemical UV Photodetector Based on Integrated Self‐Supporting SiC/ZnS Heterojunction Nanowire Arrays

Zou,

Yang,

Wang

et al. 2024

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In the realm of photodetector (PD) technology, photoelectrochemical (PEC) PDs have garnered attention owing to their inherent advantages. Advances in this field depend on functional nanostructured materials, which are pivotal in improving the separation and transport of photogenerated electron–hole pairs to improve device efficiency. Herein, a highly photosensitive PEC UV PD is built using integrated self‐supporting SiC/ZnS heterojunction nanowire array photoelectrodes through anodization and chemical deposition. Compared with the original SiC nanoarrays, the optimized SiC/ZnS‐25 nanoarrays exhibit high photocurrent density (Dph, 809.2 µA cm−2), rapid rise/decay times (τr/τd, 4/21 ms), high responsivity (Rλ, 1.226 A W−1), remarkable detectivity (D*, 2.517 × 1011 Jones), and large external quantum efficiency (EQE, 40.57%) under 375 nm UV light with a bias voltage of 0.6 V. Furthermore, SiC/ZnS‐25 delivers excellent self‐powered performance, with Rλ, D*, and EQE reaching 0.91 A W−1, 1.69 × 1011 Jones, and 30.24%, respectively. In addition, the device exhibits excellent long‐term operation and aging stability under a bias voltage of 0.6 V and under self‐powered conditions. The excellent photodetection behaviors of the SiC/ZnS PEC PD are mainly ascribed to the synergistic effect of the novel well‐aligned nanowire geometry, heterojunction with ZnS nanofilms of optimal thickness, and integrated self‐supporting configuration of the photoelectrode.

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Robust and fast response solar-blind UV photodetectors based on the transferable 4H-SiC free-standing nanowire arrays

Cited by 15 publications

References 38 publications

Resonant-cavity-enhanced 4H-SiC thin film MSM UV photodetectors on SiO₂/Si substrates

Resonant-cavity-enhanced 4H-SiC thin film MSM UV photodetectors on SiO₂/Si substrates

SiC@NiO Core–Shell Nanowire Networks‐Based Optoelectronic Synapses for Neuromorphic Computing and Visual Systems at High Temperature

High‐Responsivity Self‐Powered Photoelectrochemical UV Photodetector Based on Integrated Self‐Supporting SiC/ZnS Heterojunction Nanowire Arrays

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Robust and fast response solar-blind UV photodetectors based on the transferable 4H-SiC free-standing nanowire arrays

Cited by 15 publications

References 38 publications

Resonant-cavity-enhanced 4H-SiC thin film MSM UV photodetectors on SiO2/Si substrates

Resonant-cavity-enhanced 4H-SiC thin film MSM UV photodetectors on SiO2/Si substrates

SiC@NiO Core–Shell Nanowire Networks‐Based Optoelectronic Synapses for Neuromorphic Computing and Visual Systems at High Temperature

High‐Responsivity Self‐Powered Photoelectrochemical UV Photodetector Based on Integrated Self‐Supporting SiC/ZnS Heterojunction Nanowire Arrays

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Product

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Resonant-cavity-enhanced 4H-SiC thin film MSM UV photodetectors on SiO₂/Si substrates

Resonant-cavity-enhanced 4H-SiC thin film MSM UV photodetectors on SiO₂/Si substrates