Robust approach towards wearable power efficient transistors with low subthreshold swing

Contemporary innovations in two-dimensional transition metal dichalcogenide-based P–N junctions for optoelectronics

“…[1][2][3][4][5][6] 2D materials have established a significant deal of devotion in the fields of spintronics, [7][8][9][10][11][12] electronics, [13][14][15][16][17] and optoelectronics. 15,[18][19][20][21][22][23][24] Scientists were sure that heat fluctuation made it difficult for nanoparticles to maintain stability, which ultimately caused a breakdown. The thermally stable graphene in this scenario has greatly surprised scientists, spurring the rapid growth of the 2D materials research field over the past few decades.…”

“…A broad range of applications, including photodetectors, 66,67 are possible owing to the band gap variation between multilayer and monolayer direct gaps 68,69 and field-effect transistor (FET), 16,65,[70][71][72][73] as well as optical communication. 74,75 The fundamental components of diodes, transistors, photodetectors, and solar cells, which make up advanced electronics and optoelectronic relevance, 20,23 are junctions that contain homo-and heterotypes. 24,[76][77][78] Significant studies have focused on the p-n interface made of various 2D materials, creating a novel material manifesto for investigating novel physical features and innovative device applications.…”

In-situ temperature-dependent sheet resistance study of Cu films in oxygen ambient for heterogeneous integrations

“…Semiconductors and power-efficient devices are getting increased attention due to their highly efficient operating performance [1][2][3][4][5][6]. Nowadays, many three-dimensional integrated circuits (3D-IC) provide a promising solution that extends beyond Moore's law by applying wafer-bonding techniques [7].…”

Gate-controlled rectification and broadband photodetection in a P–N diode based on TMDC heterostructures

“…This is a result of the ultrathin morphological features and the unique energy band alignments. [1][2][3][4][5][6][7] As opposed to typical semiconductor heterojunctions, these vdW heterostructures enable the development of configurations without the restriction of atomic lattice match and have high-quality integrations since there are no dangling bonds at the interfaces. 8,9 These ultrathin vdW nanostructures have demonstrated potential performance for light-emitting diodes (LEDs), 10 field effect transistors (FETs), 11,12 logic circuits, 13 photodetectors, [14][15][16] flexible devices, 17 and bipolar junction transistors.…”