Zigzag edges of the honeycomb structure of graphene exhibit magnetic polarization, making them attractive as building blocks for spintronic devices. Here, we show that devices with zigzag-edged triangular antidots perform essential spintronic functionalities, such as spatial spin splitting or spin filtering of unpolarized incoming currents. Near-perfect performance can be obtained with optimized structures. The device performance is robust against substantial disorder. The gate-voltage dependence of transverse resistance is qualitatively different for spin-polarized and spin-unpolarized devices, and can be used as a diagnostic tool. Importantly, the suggested devices are feasible within current technologies. DOI: 10.1103/PhysRevB.95.121406 Introduction. The weak intrinsic spin-orbit coupling and long spin diffusion lengths suggest graphene as an ideal spintronic material [1][2][3][4][5][6][7][8][9][10]. Spin splitting or filtering in graphene is predicted for half-metallic nanoribbons [2,[11][12][13] [24][25][26], and, in particular, nanostructured zigzag (zz)-edged devices [11][12][13]15,16,[27][28][29][30][31][32][33] are among the proposed graphene-based half metals. Spin filters have been proposed using triangular dots [15,31] or perforations [29] with many similarities, e.g., low-energy localized magnetic states and a net sublattice imbalance. However, perforations, or antidots [34][35][36], have the advantage over dots of being embedded in the graphene sheet which allows a wide range of spin-dependent transport properties. Although signatures of localized magnetic states have been detected [37][38][39], spin manipulation in graphene-based half metals has yet to be realized in experiments.In this Rapid Communication, we investigate the transport properties of graphene devices with embedded zz-edged triangular antidots. Such devices are within the reach of stateof-the-art lithographic methods: Triangular holes in graphene have recently been fabricated [40], and experiments suggest the possibility of zz-etched nanostructures [41,42]. Another possibility is to employ a lithographic mask of patterned hexagonal boron nitride, which naturally etches into zz-edged triangular holes [43,44]. The zz-edged structures support local ferromagnetic moments [3], however, global ferromagnetism is induced when the overall sublattice symmetry of the edges is broken [11][12][13]16,27,28,45]. This occurs for zzedged triangles [15,[29][30][31][32][33]. We have recently discussed the electronic structure of triangular graphene antidot lattices (GALs) [33]-here, we focus on transport through devices