Robust Compact Model for Bipolar Oxide-Based Resistive Switching Memories

Bocquet, Marc; Deleruyelle, Damien; Aziza, Hassen; Müller, Christophe; Portal, Jean‐Michel; Cabout, T.; Jalaguier, E.

doi:10.1109/ted.2013.2296793

Cited by 112 publications

(105 citation statements)

References 34 publications

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“…[222][223][224][225][226][227] These compact models rely on conceptual simplifications (e.g., the idea of a conductive filament with a given shape, e.g., cylindrical or conical) and physical assumptions inferred from empirical measurements. [226,227,231,232] Compact models are calibrated on FEM/kMC simulations and I-V sweeps measured under different conditions, which depends also on model parameters (e.g., Schottky barrier height, Poole-Frenkel barrier, hopping range, number of open Landauer channels, CF resistivity thermal resistance and capacitance, among others). The charge transport mechanism can be estimated by fitting the shape and magnitude of the I-V sweeps obtained in the experiments (in both LRS and HRS) using models formulated using compact expressions, such as Schottky or Poole-Frenkel emission, variable-range or fixed-range hopping, Landauer formula (ballistic transport), Ohm's law, and tunneling (direct, Fowler-Nordheim or trapassisted).…”

Section: Semi-empirical/compact Modelsmentioning

confidence: 99%

Recommended Methods to Study Resistive Switching Devices

Lanza

Wong

Pop

et al. 2018

Adv Elect Materials

521

434

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Resistive switching (RS) is an interesting property shown by some materials systems that, especially during the last decade, has gained a lot of interest for the fabrication of electronic devices, with electronic nonvolatile memories being those that have received the most attention. The presence and quality of the RS phenomenon in a materials system can be studied using different prototype cells, performing different experiments, displaying different figures of merit, and developing different computational analyses. Therefore, the real usefulness and impact of the findings presented in each study for the RS technology will be also different. This manuscript describes the most recommendable methodologies for the fabrication, characterization, and simulation of RS devices, as well as the proper methods to display the data obtained. The idea is to help the scientific community to evaluate the real usefulness and impact of an RS study for the development of RS technology.

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Section: Semi-empirical/compact Modelsmentioning

confidence: 99%

Recommended Methods to Study Resistive Switching Devices

Lanza

Wong

Pop

et al. 2018

Adv Elect Materials

521

434

View full text Add to dashboard Cite

show abstract

“…In contrast with the experimental efforts, theoretical studies remain relatively scarce [16][17][18][19][20][21][22][23][24]. A few Published by the American Physical Society under the terms of the Creative Commons Attribution 3.0 License.…”

mentioning

confidence: 99%

“…In contrast with the experimental efforts, theoretical studies remain relatively scarce [16][17][18][19][20][21][22][23][24]. A few phenomenological models were proposed and numerically investigated, which captured different aspects of the observed effects [3,[25][26][27].…”

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confidence: 99%

Shock Waves and Commutation Speed of Memristors

et al. 2016

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Progress of silicon-based technology is nearing its physical limit, as the minimum feature size of components is reaching a mere 10 nm. The resistive switching behavior of transition metal oxides and the associated memristor device is emerging as a competitive technology for next-generation electronics. Significant progress has already been made in the past decade, and devices are beginning to hit the market; however, this progress has mainly been the result of empirical trial and error. Hence, gaining theoretical insight is of the essence. In the present work, we report the striking result of a connection between the resistive switching and shock-wave formation, a classic topic of nonlinear dynamics. We argue that the profile of oxygen vacancies that migrate during the commutation forms a shock wave that propagates through a highly resistive region of the device. We validate the scenario by means of model simulations and experiments in a manganese-oxide-based memristor device, and we extend our theory to the case of binary oxides. The shock-wave scenario brings unprecedented physical insight and enables us to rationalize the process of oxygen-vacancy-driven resistive change with direct implications for a key technological aspect-the commutation speed. DOI: 10.1103/PhysRevX.6.011028 Subject Areas: Condensed Matter Physics, Materials Science, Nonlinear DynamicsThe information age we live in is made possible by a physical underlayer of electronic hardware, which originates in condensed-matter physics research. Despite the great progress made in recent decades, the demand for faster and power-efficient devices continues to grow. Thus, there is urgent need to identify novel materials and physical mechanisms for future electronic-device applications. In this context, transition metal oxides (TMOs) are attracting much attention for nonvolatile memory applications [1]. In particular, TMO are associated with the phenomenon of resistive switching (RS) [2] and the memristor device [3], which is emerging as a competitive technology for nextgeneration electronics [1,[4][5][6][7][8][9][10]. The RS effect is a large, rapid, nonvolatile, reversible change of the resistance, which may be used to encode logic information. In the simplest case, one may associate high and low resistance values to binary states, but multibit memory cells are also possible [11,12].Typical systems where RS is observed are two-terminal capacitor-like devices, where the dielectric might be a TMO and the electrodes are ordinary metals. The phenomenon occurs in a strikingly large variety of systemsranging from simple binary compounds, such as NiO, TiO 2 , ZnO, Ta 2 O 5 , HfO 2 , and CuO, to more complex perovskite structures, such as superconducting cuprates and colossal magnetoresistive manganites [2,4,6,9,13].From a conceptual point of view, the main challenges for a nonvolatile memory are as follows: (i) to change its resistance within nano seconds (required for modern electronics applications), (ii) to be able to retain the state for years (i.e., n...

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“…Considering that electroforming is a strongly localized phenomenon occurring at the weakest location of the active area (i.e. at grain boundaries of polycrystalline oxide or at intrinsic/extrinsic structural defects), most compact models rely on the description of a single CF evolving within the active core material . Besides simplification needs, this assumption may be also supported by the fact that operating RRAM together with an access transistor prevents from current crowding and multiple filament formation.…”

Section: Compact Modelingmentioning

confidence: 99%

A multi‐scale methodology connecting device physics to compact models and circuit applications for OxRAM technology

Puglisi

Deleruyelle

Portal

et al. 2016

Physica Status Solidi (a)

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RRAM technology relying on transitional metal oxides (namely OxRAM) is about to reach the industrial stage. Nevertheless the physical-based understanding of the material and process implications at device and circuit levels is still not completely clear, hindering the full industrial exploitation of the OxRAM technology. In this context, this article presents a multi-scale methodology that connects the microscopic material properties to the electrical behavior of OxRAM devices at the circuit level. Microscopic models describing OxRAM operation (i.e., forming, resistive switching) and variability (e.g., cycle-to-cycle, RTN) will be reviewed and used for the development of compact models that will allow investigating the potential of this technology at the circuit level. An overview of some innovative applications involving OxRAM will be finally presented

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Robust Compact Model for Bipolar Oxide-Based Resistive Switching Memories

Cited by 112 publications

References 34 publications

Recommended Methods to Study Resistive Switching Devices

Recommended Methods to Study Resistive Switching Devices

Shock Waves and Commutation Speed of Memristors

A multi‐scale methodology connecting device physics to compact models and circuit applications for OxRAM technology

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