Robust Flexible Textile Tribovoltaic Nanogenerator via a 2D 2H‐MoS₂/Ta₄C₃ Dynamic Heterojunction

Abstract

The tribovoltaic effect can convert semiconductor interfacial frictional mechanical energy into direct current (DC) electricity, but the flexibility and durability of semiconductor materials limit its application in wearable electronic. Herein, a robust flexible textile tribovoltaic nanogenerator is presented based on a 2D dynamic heterojunction of 2H‐MoS2/Ta4C3 (MTNG). During the friction process, a built‐in electric field (Eb) and an additional interfacial electric field (ECE) are generated in a continuous dynamic contact of 2H‐MoS2/Ta4C3, and through the 2H‐MoS2/Ta4C3 dynamic heterojunction, a significant number of electron‐hole pairs are excited and move directionally to generate a DC. The influences of mechanical pressure and sliding speed on output performance of MTNGs are systematically investigated. The MTNGs deliver excellent output power density (39.15 mW m2) and outstanding robustness (43 000 cycles). Ten MTNGs can be connected in series to obtain a DC voltage of 3.3 V and in parallel to obtain a DC current of 75 µA. Furthermore, the MTNGs can effectively power a variety of commercial electronic watches and calculators by harvesting human kinetic energy. A 2D dynamic heterojunction 2H‐MoS2/Ta4C3 DC nanogenerator is described and offers a workable option for the creation of flexible DC power sources and self‐powered wearable electronics.

Triboelectric junction: a model for dynamic metal–semiconductor contacts

“…The tribovoltaic effect has been extensively studied using various materials, including first-generation semiconductors (such as Si 24 ), second-generation semiconductors (such as GaAs 50 ), third-generation semiconductors (such as GaN 14–16 and SiC 51 ), organic polymers (such as PEDOT:PSS 9,10 and polypyrrole 11 ), and 2D materials (such as graphene, 50 MoS 2 , 8,52 Ta 4 C 3 52 and Ti 2 C 3 T x 53 ), etc. Note that the derivation of the theoretical model is specially based on conventional inorganic semiconductor materials.…”